| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BUX85 is an NPN silicon power transistor from onsemi, designed for high voltage, high speed power switching applications such as converters, inverters, switching regulators, and motor control systems. It features a collector-emitter sustaining voltage (VCEO(sus)) of 450V and a maximum collector-emitter voltage (VCES) of 1000V.
The device supports a continuous collector current of 2A with a peak current of 3A. DC current gain (hFE) is 30 minimum and 50 typical at 100mA, 5V. Saturation voltages are low: VCE(sat) of 0.8V at 0.3A and 1V at 1A. Transition frequency is 4MHz minimum.
The BUX85 is housed in a TO-220 through-hole package (CASE 221A) and is Pb-free and RoHS compliant. Thermal resistance junction-to-case is 2.5°C/W, allowing 50W dissipation at 25°C case temperature. Operating junction temperature range is -65°C to 150°C.
The minimum collector-emitter sustaining voltage (VCEO(sus)) is 450V.
Continuous collector current is 2A, with a peak current of 3A (pulse test: 5ms, duty cycle ≤10%).
Maximum power dissipation is 50W at case temperature 25°C, derated above 25°C at 0.4 W/°C.
The BUX85 is available in a TO-220 (TO-220-3) through-hole package.
The operating and storage junction temperature range is -65°C to 150°C.
Yes, the datasheet states the device is Pb-free and RoHS compliant.
At Ic=100mA and Vce=5V, the DC current gain is 30 minimum and 50 typical.