LM431ACZXA
On Semiconductor
The LM431ACZXA from On Semiconductor is an adjustable shunt voltage reference. It offers a wide output voltage range and is suitable for various power management applications.
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6 pcs
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6 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BUX39 is an epitaxial silicon NPN planar transistor from SESCOCEM, engineered for high current and high power handling capabilities, coupled with high switching speed.
Key electrical specifications include a maximum collector current of 30A and a maximum power dissipation of 120W. It offers a collector-emitter sustaining voltage (VCEO(sus)) of 90V and a collector-base voltage (VCBO) of 120V. The transistor exhibits a fast turn-on time and is suitable for applications requiring efficient power switching.
Packaged in the TO-204AA (TO-3) case, the BUX39 is designed for through-hole mounting. Its robust construction and performance characteristics make it suitable for switching-control amplifiers, power gates, switching regulators, power-switching circuits, converters, inverters, and control circuits. Other applications include DC-RF amplifiers and power oscillators.
This device is noted as being in Semelab's maintenance series and is not recommended for new designs.
| Qty | Low | High |
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| 1+ | $1.84 | $1.84 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current (IC) for the BUX39 is 30A.
The BUX39 transistor has a maximum power dissipation (Ptot) of 120W.
The collector-emitter sustaining voltage (VCEO(sus)) for the BUX39 is a minimum of 90V.
The BUX39 transistor is supplied in the TO-204AA (TO-3) package.
The maximum junction and storage temperature range (Tstg, Tj) for the BUX39 is –65 to 100°C.
The turn-on time (tON) for the BUX39 is a maximum of 0.3µs under specific test conditions.
