| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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188 pcs
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188 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BUX39 is an NPN planar silicon transistor designed for high current and high power handling capabilities, combined with high switching speed. Manufactured by Thomson-CSF, this device is suitable for applications such as switching-control amplifiers, power gates, switching regulators, power-switching circuits, converters, inverters, and control circuits. It can also be used for DC-RF amplifiers and power oscillators.
Key electrical specifications include a maximum collector current of 30A and a collector-emitter sustaining voltage of 90V. The transistor offers a maximum power dissipation of 120W and a thermal resistance junction-to-case of 1.46 °C/W. It features a fast turn-on time and high current capability.
The BUX39 is housed in a TO-204AA (TO-3) package, designed for through-hole mounting. The datasheet indicates a maximum junction and storage temperature range of -65 to 100°C and a lead temperature of 230°C for 10 seconds.
This transistor is noted as being in Semelab's maintenance series and is not recommended for new designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.87 | $1.87 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current (IC) for the BUX39 is 30A.
The collector-emitter sustaining voltage (VCEO(sus)) for the BUX39 is 90V.
The maximum power dissipation (Ptot) for the BUX39 is 120W.
The BUX39 transistor is in a TO-204AA (TO-3) package.
The maximum junction and storage temperature range for the BUX39 is -65 to 100°C.
The thermal resistance junction-to-case (Rth JC) for the BUX39 is 1.46 °C/W.