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BUX11 The STMicroelectronics BUX11 is an NPN power transistor designed for general-purpose applications. It features a 200V collector-emitter voltage and a 20A collector current.
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BUX11

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Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics BUX11 is an NPN power transistor designed for general-purpose applications. It features a 200V collector-emitter voltage and a 20A collector current.
✓ Total Stock: 1 pcs
$ Price Range: $0.85

BUX11 Available from 1 distributor

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BUX11 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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BUX11 Description

Short technical summary and product information.

The BUX11 from STMicroelectronics is a high-power NPN bipolar junction transistor (BJT) housed in a TO-3 metal case. This transistor is designed for general-purpose power applications, offering robust performance characteristics.

 

Key electrical specifications include a maximum collector current (IC) of 20 A and a maximum collector-emitter voltage (VCEO) of 200 V. The device also boasts a maximum collector-base voltage (BVCBO) of 200 V and a power dissipation (PD) of up to 150 W at ambient temperature. Its DC current gain (hFE) is a minimum of 20, and it has a nominal transition frequency (fT) of 8 MHz.

 

The BUX11 is suitable for various power switching and amplification circuits. Its TO-3 package with flange mount and pin/peg terminal form allows for efficient heat dissipation and secure mounting in industrial and high-power applications. The transistor is constructed with silicon for reliable performance.

BUX11 Quick Information

Product Type: NPN Power Transistor
Canonical Name: BUX11 NPN Power Transistor
Subcategory: Single

BUX11 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BUX11 Estimated Pricing

Qty Low High
1+ $0.85 $0.85

Estimated market price range - modelled values for guidance only, not live distributor offers.

BUX11 Features

  • 200V collector-emitter voltage rating.
  • 20A maximum collector current.
  • 150W maximum power dissipation.
  • TO-3 metal case package.
  • NPN silicon power transistor.

BUX11 Applications

  • Suitable for power switching circuits.
  • Used in general-purpose amplification.
  • Designed for high-power applications.
  • Ideal for industrial power supplies.

BUX11 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector current for the BUX11 transistor?

The maximum collector current (IC) for the BUX11 is 20 A.

What is the maximum collector-emitter voltage (VCEO) of the BUX11?

The maximum collector-emitter voltage (VCEO) for the BUX11 is 200 V.

What is the power dissipation rating of the BUX11 transistor?

The power dissipation (PD) for the BUX11 is rated at a maximum of 150 W at ambient temperature.

What is the package type for the BUX11 transistor?

The BUX11 transistor is supplied in a TO-3 metal case with flange mounting.

What is the minimum DC current gain (hFE) of the BUX11?

The minimum DC current gain (hFE) for the BUX11 is 20.

What is the transition frequency (fT) of the BUX11 transistor?

The nominal transition frequency (fT) of the BUX11 is 8 MHz.

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