BUX10

The BUX10 is a high power NPN silicon transistor manufactured by STMicroelectronics, built with multi-epitaxial planar technology. It is designed for switching and linear applications in industrial and military equipment, including motor control and other high-current circuits. The device is housed in a JEDEC TO-3 metal case and supports chassis mounting.

Key electrical ratings include a collector-emitter voltage (VCEO) of 125 V, collector-base voltage (VCBO) of 160 V, and emitter-base voltage (VEBO) of 7 V. Continuous collector current is rated at 25 A, with a peak current capability of 30 A (tP < 10 ms). Maximum power dissipation is 150 W at a case temperature of 25°C, and the maximum junction temperature is 200°C. Thermal resistance from junction to case is specified at 1.17°C/W maximum.

The transistor provides a DC current gain (hFE) of at least 20 at IC = 10 A and VCE = 2 V, with a gain range of 10 to 60 at IC = 20 A and VCE = 4 V. Collector-emitter saturation voltage is 0.6 V max at IC = 10 A, IB = 1 A, and 1.2 V max at IC = 20 A, IB = 2 A. Transition frequency is 8 MHz at IC = 1 A and VCE = 15 V. Switching performance includes a typical turn-on time of 0.5 µs, storage time of 0.6 µs, and fall time of 0.15 µs.

The TO-3 package is suitable for applications requiring efficient heat transfer through the metal case to a chassis or heatsink. The device is intended for use in motor control, linear power stages, and switching industrial equipment.