LM431ACZXA
On Semiconductor
The LM431ACZXA from On Semiconductor is an adjustable shunt voltage reference. It offers a wide output voltage range and is suitable for various power management applications.
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46 pcs
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46 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BUW84 from Philips is a silicon diffused NPN power transistor designed for high-voltage and high-speed switching applications. It is housed in a SOT-82 package, making it suitable for through-hole mounting.
Key electrical characteristics include a collector-emitter peak voltage (Vcesm) of 800V and a collector-emitter voltage (Vceo) of 400V. The device can handle a continuous collector current (IC) of up to 2A and a peak collector current (ICM) of 3A. Its collector-emitter saturation voltage (VCEsat) is a maximum of 1V at 1A/200mA.
With a total power dissipation (Ptot) of 50W at 25°C (mounting base temperature), the BUW84 is well-suited for demanding applications. Thermal resistance from junction to mounting base (Rth j-mb) is 2.1 K/W, and from junction to ambient (Rth j-a) is 100 K/W.
This transistor is ideal for use in converters, inverters, switching regulators, motor control systems, and other switching applications requiring robust performance and high voltage handling capabilities.
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BUW84 has a maximum collector-emitter voltage (VCEO) of 400V and a peak collector-emitter voltage (VCES) of 800V.
The maximum continuous collector current (IC) is 2A, with a peak current (ICM) of 3A.
The total power dissipation (Ptot) is 50W at a mounting base temperature of 25°C.
The transition frequency (fT) is a minimum of 20MHz at VCE=10V, IC=200mA, f=1MHz.
The BUW84 is available in a SOT-82 through-hole package.
The DC current gain (hFE) is a minimum of 15 at IC=5A, VCE=5V, and typically 50 at IC=100mA, VCE=5V.
The collector-emitter saturation voltage (VCEsat) is a maximum of 1V at IC=1A, IB=200mA, and 0.8V at IC=0.3A, IB=30mA.
