BUW13A

The BUW13A is a Silicon NPN Power Transistor manufactured by NXP Semiconductors. This component is designed for high voltage and high-speed switching applications, making it suitable for use in converters, inverters, switching regulators, and motor control systems.

Key electrical specifications include a Collector-Emitter Voltage (VCEO) of 450V and a continuous Collector Current (IC) of 15A. It can handle a peak collector current of 30A and a continuous base current of 6A. The maximum power dissipation is rated at 175W at a case temperature of 25°C. The junction temperature can reach up to 150°C, with a storage temperature range of -65°C to 150°C.

Thermal characteristics include a junction-to-case thermal resistance of 0.7°C/W. Electrical characteristics detail a Collector-Emitter Sustaining Voltage (VCEO(SUS)) of 450V. The Collector-Emitter Saturation Voltage (VCE(sat)) is a maximum of 1.5V at 8A collector current and 1.6A base current. The Base-Emitter Saturation Voltage (VBE(sat)) is a maximum of 1.6V under the same conditions. Collector cutoff current (ICES) is 1mA at 1000V VCE and BE=0, and 4mA at 1000V VCE, BE=0, TC=125°C. Emitter cutoff current (IEBO) is 10mA at 9V EB and IC=0.

Switching times are specified for resistive loads: Turn-on time (ton) is 1.0 µs, Storage time (ts) is 4.0 µs, and Fall time (tf) is 0.8 µs, all measured at 8A collector current and specific base currents. The transistor has a DC Current Gain (hFE) ranging from 10 to 35 under different test conditions. The component is housed in a 3-terminal package.