| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
26 pcs
|
26 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| Storage Temperature | |
| Tape & Reel |
The BUW12AF is an NPN Power Transistor manufactured by NXP Semiconductors, suitable for high voltage and fast switching industrial applications. It features a Collector-Emitter Sustaining Voltage of 450V minimum and a low Collector-Emitter Saturation Voltage of 1.5V maximum at 5A.
Key electrical characteristics include a continuous Collector Current rating of 8A and a peak Collector Current of 20A. The Base Current is rated up to 4A peak. The device operates with a Junction Temperature up to 150℃ and has a Storage Temperature Range of -65℃ to 150℃.
Thermal performance is supported by a Junction to Case thermal resistance of 3.7℃/W. The transistor exhibits fast switching times, with a typical turn-on time of 1.0μs, storage time of 4.0μs, and fall time of 0.8μs, making it suitable for demanding industrial environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.13 | $2.13 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum Collector-Emitter Sustaining Voltage is 450V.
The maximum Collector-Emitter Saturation Voltage is 1.5V at a collector current of 5A and base current of 1A.
The continuous collector current is rated at 8A.
The junction temperature can reach up to 150℃.
The thermal resistance from junction to case is 3.7℃/W.
The typical switching times are 1.0μs for turn-on, 4.0μs for storage, and 0.8μs for fall time.