| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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495 pcs
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495 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request | |
|
20 pcs
|
20 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Turn On Time |
The BUW12AF is a silicon NPN power transistor manufactured by Philips, engineered for demanding high voltage and fast switching industrial applications. It boasts a collector-emitter sustaining voltage of 450V (minimum) and a low collector saturation voltage of 1.5V maximum at 5A.
Key electrical characteristics include a continuous collector current rating of 8A and a peak collector current of 20A. The base current capabilities are 4A continuous and 6A peak. Thermal performance is supported by a junction-to-case thermal resistance of 3.7°C/W, with a maximum continuous collector power dissipation of 34W at 25°C.
This transistor is designed for applications requiring robust performance in high-voltage switching scenarios. Its switching times are also notable, with a turn-on time of 1.0μs, storage time of 4.0μs, and fall time of 0.8μs, making it suitable for efficient power management circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BUW12AF has a collector-emitter voltage (VCEO) of 450V and a sustaining voltage (VCEO(SUS)) of 450V minimum.
The continuous collector current (IC) rating is 8A, with a peak collector current (ICM) of 20A.
The collector power dissipation is 34W at a case temperature of 25°C.
Typical switching times are 1.0µs turn-on, 4.0µs storage, and 0.8µs fall time at IC=5A and IB1=-IB2=1A.
The base-emitter saturation voltage (VBE(sat)) is 1.5V maximum at IC=5A, IB=1A.
The maximum junction temperature is 150°C, and the storage temperature range is -65°C to 150°C.
The collector-base voltage (VCBO) is 1000V.