| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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69 pcs
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69 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
17 pcs
|
17 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BUW12A from Philips is an NPN Power Transistor designed for demanding industrial applications. It offers a high collector-base voltage of 1000V and a collector-emitter voltage of 450V, making it suitable for high-power switching and amplification circuits.
This transistor features a low collector saturation voltage and fast switching speeds, with a turn-on time of 1.0 μs and a fall time of 0.8 μs. The maximum continuous collector current is 8A, with a peak current capability of 20A. It is housed in a TO-3PN package, which is suitable for through-hole mounting and provides good thermal dissipation with a thermal resistance from junction to case of 1.2 ℃/W.
Key electrical characteristics include a maximum power dissipation of 125W at 25℃ case temperature and a junction temperature up to 150℃. The storage temperature range is -65 to 175℃.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-base voltage (VCBO) for the BUW12A is 1000V when the emitter is open.
The maximum collector-emitter voltage (VCEO) for the BUW12A is 450V when the base is open.
The continuous collector current (IC) for the BUW12A is 8A.
The BUW12A transistor is supplied in a TO-3PN package.
The thermal resistance from junction to case (Rth j-c) for the BUW12A is 1.2 ℃/W.
The BUW12A has a turn-on time of 1.0 μs, a storage time of 4.0 μs, and a fall time of 0.8 μs.