| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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40 pcs
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40 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Technology |
The STMicroelectronics BUV39 is a power bipolar transistor featuring an NPN silicon construction. It is designed for applications requiring significant current handling capabilities, with a maximum collector current (IC) of 25A and a collector-emitter voltage (VCEO) of 90V.
This transistor is housed in a hermetically sealed TO-3 metal package, which is suitable for through-hole mounting. The TO-3 package is known for its robust thermal performance, making it appropriate for power applications where heat dissipation is a concern.
As a power transistor, the BUV39 is well-suited for various power switching and linear applications. Its specifications indicate its utility in circuits that manage substantial electrical loads. Further details on specific performance characteristics and application suitability can be found in the manufacturer's datasheet.
| Qty | Low | High |
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| 1+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the BUV39 is 90V.
The maximum continuous collector current (IC) for the BUV39 is 25A.
The BUV39 is an NPN Silicon Power Transistor.
The BUV39 is supplied in a TO-3 metal package.