BUV298AV NPN bipolar power transistor rated for 450V collector-emitter sustaining voltage and 50A continuous collector current in an ISOTOP chassis-mount package.
Mfr Part #:

BUV298AV

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
NPN bipolar power transistor rated for 450V collector-emitter sustaining voltage and 50A continuous collector current in an ISOTOP chassis-mount package.
Total Stock: 5,245 pcs
$ Price Range: $36.29

BUV298AV Available from 1 distributor

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BUV298AV Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current
Base Peak Current
Collector Emitter Saturation Voltage (Maximum @ IC = 32 A, IB = 6.4 A, Tj = 100 °C)
Collector Emitter Voltage (Maximum @ VBE = -5 V)
Collector Emitter Voltage (Nominal @ IB = 0)
Collector Peak Current
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage
Industrial Grade
Insulation Withstand Voltage
Mounting Type
Operating Temperature
Power
Storage Temperature
Storage Temperature Range
Supplier Device Package
Tape & Reel
Thermal Resistance Case-Heatsink
Thermal Resistance Junction-Case
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BUV298AV Description

Short technical summary and product information.

The BUV298AV is an NPN bipolar power transistor from STMicroelectronics designed for high-current industrial applications. It features a collector-emitter sustaining voltage (VCEO(sus)) of 450V and a maximum collector current of 50A, with a peak current capability of 75A. The device offers a low thermal resistance junction-to-case of 0.5 °C/W and includes an insulated case rated for 2500V RMS isolation.

 

This transistor is housed in the ISOTOP package, which is designed for chassis mounting and provides low internal parasitic inductance. The package supports easy mounting and efficient heat transfer to a heatsink, with a case-to-heatsink thermal resistance of 0.05 °C/W when conductive grease is applied.

 

Typical applications include motor control, switch-mode power supplies (SMPS), uninterruptible power supplies (UPS), and welding equipment. The device is specified with a maximum operating junction temperature of 150°C and a storage temperature range of -55°C to 150°C.

BUV298AV Quick Information

Product Type: Bipolar Power Transistor
Canonical Name: BUV298AV NPN Bipolar Power Transistor
Subcategory: Single BJT

BUV298AV Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BUV298AV Estimated Pricing

Qty Low High
1+ $36.29 $36.29

Estimated market price range - modelled values for guidance only, not live distributor offers.

BUV298AV Features

  • NPN bipolar power transistor 450V 50A.
  • Low thermal resistance 0.5 °C/W junction-case.
  • Insulated case rated for 2500V RMS isolation.
  • ISOTOP chassis-mount package for easy mounting.
  • Specified for industrial motor control and SMPS.

BUV298AV Applications

  • Used in motor control and drive circuits.
  • Suitable for switch-mode power supplies (SMPS).
  • Applied in uninterruptible power supplies (UPS).
  • Ideal for welding equipment power stages.

BUV298AV FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector current of the BUV298AV?

The maximum continuous collector current is 50 A, with a peak current of 75 A (tp = 10 ms).

What is the collector-emitter voltage rating?

The collector-emitter sustaining voltage (VCEO(sus)) is 450 V (IB = 0). The maximum collector-emitter voltage with VBE = -5 V is 1000 V.

What package does the BUV298AV come in?

The BUV298AV is supplied in an ISOTOP package designed for chassis mounting.

What is the maximum operating junction temperature?

The maximum operating junction temperature is 150 °C.

Is the BUV298AV RoHS compliant?

The RoHS status is listed as RoHS3 Compliant, but this information is unverified.

What is the power dissipation rating?

The maximum power dissipation is 250 W at a case temperature of 25 °C.

What is the DC current gain (hFE) of this transistor?

The minimum DC current gain (hFE) is 12 at IC = 32 A and VCE = 5 V.

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