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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
396 pcs
|
396 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current (IB) | |
| Base Peak Current (Ibm) | |
| Base-Emitter Saturation Voltage (Vbe Sat) | |
| Collector Peak Current (ICM) | |
| Collector-Base Voltage (VCBO) | |
| Collector-Emitter Saturation Voltage (Maximum @ Ic=4 A, Ib=0.4 A) | |
| Current | |
| Emitter-Base Voltage (VEBO) | |
| Fall Time (Maximum @ Vcc=90 V, Ic=8 A, Ib 1=0.8 A, Vbe=-5 V, Lb=1 µH, Tc=125 °C) | |
| Fall Time (Typical/Maximum @ Vcc=90 V, Ic=8 A, Ib 1=0.8 A, Vbe=-5 V, Lb=1 µH, Tc=25 °C) | |
| Fall Time (Typical/Maximum @ Vcc=90 V, Ic=8 A, Ib 1=0.8 A, Vbe=-6 V, Rbb=3.75Ω) | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Power Dissipation (Maximum @ Tc < 60 °C) | |
| Storage Temperature | |
| Storage Time (Typical/Maximum @ Vcc=90 V, Ic=8 A, Ib 1=0.8 A, Vbe=-5 V, Lb=1 µH, Tc=125 °C) | |
| Storage Time (Typical/Maximum @ Vcc=90 V, Ic=8 A, Ib 1=0.8 A, Vbe=-5 V, Lb=1 µH, Tc=25 °C) | |
| Storage Time (Typical/Maximum @ Vcc=90 V, Ic=8 A, Ib 1=0.8 A, Vbe=-6 V, Rbb=3.75Ω) | |
| Supplier Device Package | |
| Tape & Reel | |
| Thermal Resistance Junction-Case | |
| Transistor Type | |
| Turn-on Time (ton) (Resistive Load) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BUV27 is a multiepitaxial planar NPN silicon transistor manufactured by STMicroelectronics, housed in a TO-220 package. It is designed for high frequency and efficiency converters, switching regulators, and motor control applications.
Key electrical specifications include a collector-base voltage of 240V, collector-emitter voltage of 120V, and emitter-base voltage of 7V. The device supports a continuous collector current of 12A with a peak current of 20A. Power dissipation is rated at 85W at case temperatures below 25°C and 65W below 60°C.
The transistor offers fast switching performance with typical turn-on time of 0.4µs and storage time of 0.5µs under resistive load conditions. Low collector-emitter saturation voltage of 0.7V at 4A collector current contributes to efficient operation in switching applications.
The BUV27 is mounted through-hole in a TO-220 package, suitable for PCB mounting with appropriate heat sinking. Maximum junction temperature is 175°C with thermal resistance of 1.76°C/W from junction to case.
| Qty | Low | High |
|---|---|---|
| 1,000+ | $1.31 | $1.31 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 120V.
The maximum continuous collector current is 12A, with a peak current rating of 20A.
The BUV27 is available in a TO-220-3 through-hole package.
The maximum operating junction temperature is 175°C.
RoHS compliance is reported as RoHS3 compliant, but this is unverified and conflicting sources exist.
The total power dissipation is 85W at case temperature below 25°C and 65W below 60°C.