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BUV27 The BUV27 is a medium power NPN silicon transistor in a TO-220 package. It features 120V collector-emitter voltage, 12A collector current, and fast switching speed.
Mfr Part #:

BUV27

Available from 2 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The BUV27 is a medium power NPN silicon transistor in a TO-220 package. It features 120V collector-emitter voltage, 12A collector current, and fast switching speed.
✓ Total Stock: 476 pcs
$ Price Range: $1.31

BUV27 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Partservice ✓
Non-Authorised Inventory information
396 pcs
On Request
396 pcs On Request 1 On Request On Request On Request On Request On Request
Fe Components ✓
Non-Authorised Inventory information
80 pcs
On Request
80 pcs On Request 1 On Request On Request On Request On Request On Request
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BUV27 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
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Operating Temperature
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Tape & Reel
Transistor Type
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BUV27 Description

Short technical summary and product information.

The BUV27 is a multiepitaxial planar NPN silicon transistor manufactured by STMicroelectronics, housed in a TO-220 package. It is designed for high frequency and efficiency converters, switching regulators, and motor control applications.

 

Key electrical specifications include a collector-base voltage of 240V, collector-emitter voltage of 120V, and emitter-base voltage of 7V. The device supports a continuous collector current of 12A with a peak current of 20A. Power dissipation is rated at 85W at case temperatures below 25°C and 65W below 60°C.

 

The transistor offers fast switching performance with typical turn-on time of 0.4µs and storage time of 0.5µs under resistive load conditions. Low collector-emitter saturation voltage of 0.7V at 4A collector current contributes to efficient operation in switching applications.

 

The BUV27 is mounted through-hole in a TO-220 package, suitable for PCB mounting with appropriate heat sinking. Maximum junction temperature is 175°C with thermal resistance of 1.76°C/W from junction to case.

BUV27 Quick Information

Product Type: Bipolar (BJT) Single Transistor
Canonical Name: BUV27 Medium Power NPN Silicon Transistor
Subcategory: Single BJT

BUV27 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BUV27 Estimated Pricing

Qty Low High
1,000+ $1.31 $1.31

Estimated market price range - modelled values for guidance only, not live distributor offers.

BUV27 Features

  • NPN silicon transistor in TO-220 package.
  • 120V collector-emitter voltage rating.
  • 12A continuous collector current capability.
  • Fast switching speed for high-frequency converters.
  • Low collector-emitter saturation voltage.

BUV27 Applications

  • Used in switching regulator circuits.
  • Ideal for motor control applications.
  • Suitable for high frequency converters.
  • Designed for high efficiency power systems.

BUV27 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the BUV27?

The maximum collector-emitter voltage (VCEO) is 120V.

What is the maximum collector current rating?

The maximum continuous collector current is 12A, with a peak current rating of 20A.

What package is the BUV27 available in?

The BUV27 is available in a TO-220-3 through-hole package.

What is the maximum operating junction temperature?

The maximum operating junction temperature is 175°C.

Is the BUV27 RoHS compliant?

RoHS compliance is reported as RoHS3 compliant, but this is unverified and conflicting sources exist.

What is the power dissipation rating of the BUV27?

The total power dissipation is 85W at case temperature below 25°C and 65W below 60°C.

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