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5 pcs
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5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BUV24 is a silicon NPN power transistor manufactured by ST, suitable for power switching applications in military and industrial equipment. It features a high collector-emitter sustaining voltage of 400V and a continuous collector current rating of 20A.
Key electrical characteristics include a low collector saturation voltage of 0.6V (max.) at 6A and a high power dissipation capability of 250W at 25℃. The transistor operates with a junction temperature up to 200℃ and has a storage temperature range from -65℃ to 200℃. The thermal resistance from junction to case is 0.7℃/W.
With a DC current gain (hFE) ranging from 15 to 60 at 6A and 4V VCE, and a current-gain-bandwidth product (fT) of 8MHz at 2A and 15V VCE, the BUV24 is engineered for robust performance. Switching characteristics include a turn-on time of 1.6μs, storage time of 3.0μs, and fall time of 1.4μs under specific test conditions.
Packaged in a TO-3 metal case, this through-hole component is designed for demanding power applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the BUV24 transistor is 400V.
The BUV24 has a continuous collector current rating of 20A.
The BUV24 transistor has a power dissipation of 250W at 25℃.
The BUV24 transistor is supplied in a TO-3 metal case.
The typical DC current gain (hFE) of the BUV24 at 6A and 4V VCE is between 15 and 60.