BUV20 STMicroelectronics BUV20 is an NPN silicon transistor with 125V VCEO, 50A collector current, and 250W power dissipation in a TO-3 metal case.
Mfr Part #:

BUV20

Available from 3 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
STMicroelectronics BUV20 is an NPN silicon transistor with 125V VCEO, 50A collector current, and 250W power dissipation in a TO-3 metal case.
Total Stock: 5,610 pcs

BUV20 Available from 3 distributors

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3,500 pcs
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2,100 pcs
2100 pcs On Request 1 On Request On Request 24+ On Request On Request
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BUV20 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current (IB)
Base-Emitter Saturation Voltage (Vbe Sat)
Collector Peak Current (ICM)
Collector-Base Voltage (VCBO)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage (VEBO)
Fall Time (tf)
Frequency
Industrial Grade
Military Grade
Mounting Type
Operating Temperature
Power
Storage Temperature
Storage Temperature Range
Storage Time (ts)
Supplier Device Package
Tape & Reel
Thermal Resistance - Junction to Case
Transistor Type
Turn-On Time (ton)
VCE(sat) (Typical/Maximum @ IC=25 A, IB=2.5 A)
Vce Saturation (Max) @ Ib, Ic
Voltage
hFE (Minimum @ VCE=4 V, IC=50 A)

BUV20 Description

Short technical summary and product information.

The BUV20 from STMicroelectronics is a high current NPN silicon transistor designed for both linear and switching industrial applications. It is housed in a JEDEC TO-3 metal case and features a multiepitaxial planar construction.

 

Key electrical specifications include a collector-emitter breakdown voltage of 125V, a continuous collector current rating of 50A (60A peak), and a maximum power dissipation of 250W at case temperature 25°C. The device offers a DC current gain (hFE) of at least 20 at 25A, with a typical transition frequency of 8 MHz.

 

This transistor is well-suited for switching regulators and other industrial equipment requiring high current capability and fast switching speeds. It has a thermal resistance junction-to-case of 0.7°C/W and an operating junction temperature up to 200°C. The TO-3 package allows chassis mounting for effective heat dissipation.

BUV20 Quick Information

Product Type: Bipolar (BJT) NPN Transistor
Canonical Name: STMicroelectronics BUV20 NPN Silicon Transistor
Subcategory: Single BJT

BUV20 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

BUV20 Features

  • 125V collector-emitter breakdown voltage.
  • 50A continuous collector current rating.
  • 250W power dissipation capability.
  • TO-3 metal case for chassis mounting.
  • Fast switching with 8 MHz transition frequency.

BUV20 Applications

  • Used in industrial linear and switching equipment.
  • Ideal for switching regulator circuits.
  • Suited for military and industrial applications.

BUV20 FAQs

6 frequently asked questions generated from this part’s specifications.
What are the maximum voltage ratings for the BUV20?

The maximum collector-base voltage (VCBO) is 160V, collector-emitter voltage (VCEO) is 125V, and emitter-base voltage (VEBO) is 7V.

What is the maximum collector current of the BUV20?

The maximum continuous collector current (IC) is 50A, with a peak current (ICM) of 60A.

What package is the BUV20 available in?

The BUV20 is offered in a TO-204AA / TO-3 metal case, designed for chassis mounting.

What is the maximum power dissipation of the BUV20?

The maximum power dissipation is 250W at a case temperature of 25°C.

What is the operating temperature range for the BUV20?

The maximum junction temperature is 200°C, and the storage temperature range is -65°C to 200°C.

Is the BUV20 RoHS compliant?

The BUV20 is marked as RoHS3 compliant, but this status is unverified and should be confirmed with the manufacturer.

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