LM431ACZXA
On Semiconductor
The LM431ACZXA from On Semiconductor is an adjustable shunt voltage reference. It offers a wide output voltage range and is suitable for various power management applications.
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11 pcs
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11 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BUV18 is an NPN high current switching transistor manufactured by Thomson-CSF. Designed for high energy applications, it offers robust and fast switching capabilities.
Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 60V and a continuous collector current (IC) of 50A. The peak collector current (IC(PK)) can reach up to 90A. It also features a maximum base current (IB) of 16A and a peak base current (IB(PK)) of 40A. The transistor has a maximum power dissipation (PTOT) of 250W at a case temperature of 25°C.
This device is suitable for applications requiring high switching currents and low VCE(SAT). Its operating junction temperature (TJ) can reach up to 200°C, with a storage temperature range from -65°C to 200°C. The thermal resistance from junction to case (RthJC) is a maximum of 0.7°C/W.
The BUV18 is packaged in a TO-3 (TO-204AE) metal case, designed for through-hole mounting. Its fast switching characteristics make it ideal for use in high efficiency converters, motor drive control, and switching regulators.
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| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the BUV18 is 60V when the base current is zero.
The maximum continuous collector current (IC) for the BUV18 is 50A.
The peak collector current (IC(PK)) for the BUV18 is 90A.
The maximum base current (IB) for the BUV18 is 16A.
The maximum power dissipation (PTOT) of the BUV18 at a case temperature of 25°C is 250W.
The operating junction temperature (TJ) for the BUV18 is a maximum of 200°C, with a storage temperature range (Tstg) of -65°C to 200°C.
The BUV18 transistor is supplied in a TO-3 (TO-204AE) package.
