Ready to onboard?
Are you ready to join DistyParts and
grow your business?
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
| On Request | On Request | 10 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The STMicroelectronics BUT70W is a high-power NPN bipolar junction transistor designed for switching and linear amplification applications. It features a collector-emitter breakdown voltage of 125V and a continuous collector current rating of 32A, with a maximum power dissipation of 200W.
This transistor is housed in a TO-247-3 through-hole package, which provides robust thermal performance and ease of mounting on heatsinks. The maximum junction temperature is 150°C, supporting reliable operation in demanding environments.
The BUT70W is suitable for power management circuits, motor control, and other high-current switching applications where NPN bipolar transistor characteristics are required.
| Qty | Low | High |
|---|---|---|
| 600+ | $7.21 | $7.21 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (Vce) is 125V.
The maximum continuous collector current (Ic) is 32A.
The BUT70W is available in a TO-247-3 through-hole package.
The maximum power dissipation (Ptot) is 200W.
The maximum junction temperature is 150°C.
The BUT70W is listed as RoHS3 compliant, but this information is unverified.