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65 pcs
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65 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BUT56A is a silicon NPN power transistor from NXP Semiconductors, designed for high voltage and high speed switching applications. It is housed in a TO-220C package, making it suitable for power dissipation requirements.
Key electrical characteristics include a collector-emitter voltage (VCEO) of up to 450V and a continuous collector current (IC) of 8A. The transistor also offers a peak collector current of 10A and a peak base current of 4A. Its total power dissipation is rated at 100W at 25℃ case temperature.
With a junction temperature capability of 150℃ and a storage temperature range of -65℃ to 150℃, the BUT56A is built for demanding environments. The thermal resistance from junction to case is 1.25 K/W, ensuring efficient heat management.
This transistor is suitable for applications such as switching mode power supplies. Its high voltage and high speed capabilities make it a versatile component for power electronics designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the BUT56A is 450V when the base is open.
The continuous collector current (IC) for the BUT56A is 8A.
The BUT56A transistor is supplied in a TO-220C package.
The total power dissipation (Ptot) for the BUT56A at 25℃ case temperature is 100W.
The maximum junction temperature (Tj) for the BUT56A is 150℃.