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BUT30V The BUT30V is an NPN bipolar junction transistor from STMicroelectronics. It features a 125V collector-emitter voltage rating and 100A collector current capability.
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BUT30V

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The BUT30V is an NPN bipolar junction transistor from STMicroelectronics. It features a 125V collector-emitter voltage rating and 100A collector current capability.
✓ Total Stock: 2 pcs
$ Price Range: $26.72

BUT30V Available from 1 distributor

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✓ Non-Authorised
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2 pcs
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BUT30V Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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BUT30V Description

Short technical summary and product information.

The BUT30V is an NPN bipolar junction transistor manufactured by STMicroelectronics. It is designed for high-power switching and amplification applications requiring substantial current and voltage handling.

 

Key electrical specifications include a collector-emitter voltage (Vceo) of 125V, a continuous collector current (Ic) rating of 100A, and a power dissipation of 250W. The device offers a minimum DC current gain (hFE) of 27 at a test condition of 100A collector current and 5V Vce, with a maximum collector-emitter saturation voltage of 900mV at a base current of 10A and collector current of 100A.

 

The transistor is housed in an ISOTOP package and is designed for chassis mount installation, making it suitable for industrial power systems where robust thermal management is required. The maximum junction operating temperature is 150°C.

BUT30V Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: STMicroelectronics BUT30V NPN Bipolar Transistor
Subcategory: Single NPN

BUT30V Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BUT30V Estimated Pricing

Qty Low High
100+ $26.72 $26.72

Estimated market price range - modelled values for guidance only, not live distributor offers.

BUT30V Features

  • NPN bipolar junction transistor design.
  • Rated for 125V collector-emitter voltage.
  • Supports 100A continuous collector current.
  • 250W power dissipation capability.
  • ISOTOP chassis mount package.

BUT30V Applications

  • High-power switching circuits.
  • Motor control and drive systems.
  • Power supply regulation stages.
  • Industrial inverter applications.

BUT30V FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of the BUT30V?

The BUT30V has a collector-emitter voltage (Vceo) rating of 125V.

What is the maximum collector current for the BUT30V?

The maximum continuous collector current (Ic) is 100A.

What is the power dissipation of the BUT30V?

The power dissipation (Pc) is 250W.

What package type does the BUT30V use?

The BUT30V is housed in an ISOTOP package for chassis mount installation.

What is the operating temperature range for the BUT30V?

The maximum junction operating temperature (TJ) is 150°C.

Is the BUT30V RoHS compliant?

The BUT30V is listed as RoHS3 compliant, though this is unverified.

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