| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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395 pcs
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395 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BUT12AX from NXP Semiconductors is an NPN bipolar junction transistor (BJT) suitable for power switching and amplification applications. It is housed in a standard TO-220 package, facilitating through-hole mounting.
Key electrical characteristics include a maximum collector-emitter breakdown voltage of 450V and a continuous collector current rating of 8A. These specifications make it a robust choice for applications requiring moderate power handling capabilities.
The transistor's design and packaging are typical for general-purpose power applications where reliability and ease of integration are important. Its NPN structure allows for common emitter, collector, and base configurations in circuit designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BUT12AX transistor has a maximum collector-emitter breakdown voltage of 450V.
The BUT12AX can handle a maximum continuous collector current of 8A.
The BUT12AX transistor is supplied in a TO-220 package.
The BUT12AX is an NPN transistor.