| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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445 pcs
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445 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name |
The NXP Semiconductors BUT12AF is a silicon diffused power transistor designed for various electronic applications. It features a maximum collector current of 8A and a high collector-emitter voltage rating of 450V, making it suitable for power switching and amplification circuits.
Key electrical characteristics include a maximum collector emitter saturation voltage of 1.5V and a maximum power dissipation of 23W. The transistor operates within a maximum temperature range of 150°C. It has 3 terminals and is manufactured by NXP Semiconductors.
This power transistor is part of the Current Regulation - Diodes, Transistors category. While specific packaging and mounting details are not provided, its specifications suggest applications in power supply units, motor control, and general-purpose power amplification where robust performance is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $165.89 | $165.89 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current is 8A.
The collector-emitter voltage rating is 450V.
The maximum power dissipation is 23W.
The maximum operating temperature is 150°C.
The collector emitter saturation voltage is 1.5V.