BUT12A NPN silicon transistor rated for 450V collector-emitter voltage and 8A continuous collector current. Packaged in TO-220-3 for through-hole mounting.
Mfr Part #:

BUT12A

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
NPN silicon transistor rated for 450V collector-emitter voltage and 8A continuous collector current. Packaged in TO-220-3 for through-hole mounting.
Total Stock: 2,400 pcs
$ Price Range: $1.49

BUT12A Available from 1 distributor

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2,400 pcs
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BUT12A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current
Base-Emitter Saturation Voltage (Vbe Sat)
Collector Current (Pulse)
Collector-Base Voltage (VCBO)
Current
Fall Time
Mounting Type
Operating Temperature
Power
Storage Temperature
Storage Temperature Range
Storage Time
Supplier Device Package
Tape & Reel
Transistor Type
Turn On Time
Vce Saturation (Max) @ Ib, Ic
Voltage

BUT12A Description

Short technical summary and product information.

The BUT12A is an NPN silicon bipolar junction transistor designed for high voltage power switching applications. It features a maximum collector-emitter voltage (Vceo) of 450V and a continuous collector current rating of 8A, with pulse capability up to 20A. The device can dissipate up to 100W at a case temperature of 25°C.

 

Electrical characteristics include a collector-emitter saturation voltage (Vce(sat)) of 1.5V maximum at Ic=6A and Ib=1.2A, and a base-emitter saturation voltage (Vbe(sat)) of 1.5V maximum under the same conditions. Switching speeds are specified with a turn-on time of 1µs, storage time of 4µs, and fall time of 0.8µs at Vcc=250V and Ic=6A.

 

The transistor is housed in a standard TO-220-3 package with through-hole mounting, suitable for heatsinking in power circuits. The junction temperature range is -65°C to 150°C, with storage from -65°C to 175°C.

BUT12A Quick Information

Product Type: Bipolar Junction Transistor (BJT) - Single
Series: BUT12
Canonical Name: BUT12A NPN Silicon High Voltage Power Switching Transistor
Subcategory: High Voltage Power Switching

BUT12A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BUT12A Estimated Pricing

Qty Low High
202+ $1.49 $1.49

Estimated market price range - modelled values for guidance only, not live distributor offers.

BUT12A Features

  • NPN silicon high voltage power transistor.
  • 450V collector-emitter voltage rating.
  • 8A continuous collector current capability.
  • 100W power dissipation at 25°C case.
  • TO-220-3 through-hole package.

BUT12A Applications

  • High voltage power switching circuits.
  • Switch mode power supply designs.
  • Motor control and drive applications.
  • Lighting ballast and inverter circuits.

BUT12A FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the BUT12A?

The maximum collector-emitter voltage (Vceo) is 450V.

What is the continuous collector current rating?

The continuous collector current (Ic) is 8A, with pulse capability up to 20A.

What package is the BUT12A available in?

The BUT12A is supplied in a TO-220-3 through-hole package.

What is the maximum power dissipation?

The maximum collector dissipation is 100W at a case temperature of 25°C.

What is the operating junction temperature range?

The junction temperature range is -65°C to 150°C, with storage from -65°C to 175°C.

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