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400 pcs
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400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BUT11AX from NXP Semiconductors is a silicon diffused npn power transistor. It is designed for high-voltage and high-speed applications, making it suitable for use in converters, inverters, switching regulators, and motor control systems.
Key electrical specifications include a peak collector-emitter voltage (VCESM) of 1000V and a continuous collector current (IC) of 5A. The transistor can handle a peak collector current (ICM) of 10A and has a maximum total power dissipation (Ptot) of 32W at 25°C case temperature. Its collector-emitter saturation voltage (VCEsat) is a maximum of 1.5V at 2.5A.
This device features a fall time (tf) of 150ns and a turn-off storage time (ts) of 3.5μs under resistive load conditions. The BUT11AX is housed in a plastic full-pack envelope, specifically the SOT186A package, which is isolated. The junction temperature (Tj) is rated up to 150°C, and storage temperature ranges from -65°C to 150°C.
With its robust specifications, the BUT11AX is a reliable component for demanding power electronic applications requiring efficient switching and high voltage handling.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The peak collector-emitter voltage (VCESM) for the BUT11AX is 1000V.
The continuous collector current (IC) for the BUT11AX is 5A.
The total power dissipation (Ptot) for the BUT11AX is 32W at 25°C.
The BUT11AX is supplied in the SOT186A package.
Under resistive load, the typical turn-on time is 0.6μs, turn-off storage time is 3.5μs, and fall time is 0.6μs. Under inductive load, the typical turn-off storage time is 1.5μs and fall time is 150ns.