| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel | |
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The BUT11ATU is an NPN bipolar junction transistor designed for high voltage switching applications. With a collector-emitter voltage rating of 450V and a continuous collector current capacity of 5A, it is suitable for power supply and motor control circuits. The device features a maximum power dissipation of 100W, enabling robust performance in demanding environments. Electrical characteristics include a Vce saturation voltage of 1.5V at 500mA base current and 2.5A collector current, ensuring efficient switching. The transistor is housed in a TO-220-3 through-hole package, which provides excellent thermal management through its metal tab. The operating junction temperature can reach up to 150°C. This part is manufactured by ON Semiconductor, a leading supplier of discrete semiconductors. The RoHS3 compliance status is indicated, though not verified by direct documentation. The BUT11ATU is widely used in linear and switching power supplies, as well as general purpose amplifier circuits.
| Qty | Low | High |
|---|---|---|
| 378+ | $0.79 | $0.79 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BUT11ATU has a collector-emitter voltage (Vceo) rating of 450V.
The BUT11ATU is available in a TO-220-3 through-hole package.
The maximum junction temperature is 150°C.
The BUT11ATU is indicated as RoHS3 compliant, though this status is unverified.
The continuous collector current rating is 5A.
The maximum power dissipation is 100W.