SL3S1206FUD2/HAA-VB2
NXP Semiconductors
The NXP Semiconductors SL3S1206FUD2/HAA-VB2 is a Chassis Mount Resistor. It is RoHS3 Compliant and REACH Unaffected.
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21 pcs
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21 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BUT11AF is an NPN Silicon Transistor manufactured by NXP Semiconductors, suitable for high voltage power switching applications. It features a maximum Collector-Base Voltage of 1000V and a maximum Collector-Emitter Voltage of 450V for the BUT11AF variant. The device can handle a continuous DC Collector Current of up to 5A and a pulse current of 10A.
Key electrical characteristics include a maximum Collector Dissipation of 40W at 25°C case temperature and a Junction Temperature up to 150°C. The transistor has a typical thermal resistance of 3.125°C/W from junction to case. Switching characteristics are also specified, with turn-on time at 1µs, storage time at 4µs, and fall time at 0.8µs.
The BUT11AF is housed in a TO-220F package, designed for through-hole mounting. Its robust specifications make it a suitable component for demanding power applications requiring high voltage handling capabilities.
| Qty | Low | High |
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| 1+ | $1.26 | $1.26 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Base Voltage for the BUT11AF is 1000V.
The maximum Collector-Emitter Voltage for the BUT11AF is 450V.
The continuous DC Collector Current rating of the BUT11AF is 5A.
The maximum Junction Temperature for the BUT11AF is 150°C.
The BUT11AF transistor is supplied in a TO-220F package.
