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100 pcs
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100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Philips BUT11AF is a silicon diffused NPN power transistor designed for high-voltage and high-speed applications. It features a glass-passivated construction and an electrically insulated mounting base, making it suitable for use in converters, inverters, switching regulators, and motor control systems.
Key electrical specifications include a collector-emitter voltage peak value (VCESM) of 1000V and a continuous collector current (IC) of 5A. The total power dissipation (Ptot) is rated at 20W at 25°C heatsink temperature. Saturation voltage (VCEsat) is a maximum of 1.5V at 2.5A collector current and 0.5A base current. Dynamic characteristics include a typical turn-on time of 1μs and a typical turn-off storage time of 4μs under resistive load conditions.
The transistor is housed in a SOT186 package, which provides an electrically insulated mounting base. Thermal resistance from junction to heatsink is typically 3.95 K/W with heatsink compound, and junction to ambient is 55 K/W in free air. Storage temperature ranges from -65°C to 150°C, with a maximum junction temperature of 150°C.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage peak value (VCESM) is 1000V, and the collector-emitter voltage (VCEO) with an open base is 450V.
The maximum continuous collector current (IC) for the BUT11AF is 5A.
The total power dissipation (Ptot) for the BUT11AF is 20W when the heatsink temperature is 25°C.
Under resistive load conditions, the typical turn-on time is 1μs, turn-off storage time is 4μs, and fall time is 0.8μs. For inductive loads, storage time is 1.1 to 1.4μs and fall time is 80 to 150ns.
The BUT11AF is supplied in a SOT186 package.