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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6 pcs
|
6 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current (IB) | |
| Base Peak Current (Ibm) | |
| Base-Emitter Saturation Voltage (Vbe Sat) | |
| Collector Cut-off Current (Maximum @ Vce=rated VCES, Tc=125 °C) | |
| Collector Cut-off Current (Maximum @ Vce=rated VCES, Tc=25 °C) | |
| Collector Peak Current (ICM) | |
| Collector-Emitter Sustaining Voltage (VCEO(sus)) | |
| Collector-Emitter Voltage (VCES) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| DC Current Gain (hFE) (Minimum/Typical @ Ic=5 mA, Vce=5 V) | |
| Emitter Cut-off Current (IEBO) | |
| Emitter-Base Voltage (VEBO) | |
| Fall Time (tf) | |
| Lead Pitch | |
| Mounting Type | |
| Number of Pins | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Storage Temperature Range | |
| Storage Time (ts) | |
| Supplier Device Package | |
| Tape & Reel | |
| Thermal Resistance, Junction-Case (RthJC) | |
| Transistor Type | |
| Turn-On Time (ton) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BUT11A is a silicon multiepitaxial mesa NPN transistor in a JEDEC TO-220 plastic package, intended for switching applications such as flyback and forward single transistor low power converters. This device is characterized by a high voltage capability with a collector-emitter voltage rating of 450 V (VCEO) and up to 1000 V with base shorted (VCES). The maximum continuous collector current is 5 A, with a peak current capability of 10 A. Base current is rated at 2 A continuous and 4 A peak.
Key electrical characteristics include a DC current gain (hFE) of 10 minimum and 35 typical at 5 mA and 0.5 A collector currents, and a collector-emitter saturation voltage of 1.5 V maximum at 2.5 A. The transistor features fast switching speeds with typical turn-on time of 1 µs, storage time of 4 µs, and fall time of 0.8 µs, making it suitable for high-frequency switching power supplies.
Thermal characteristics include a maximum power dissipation of 83 W at case temperature 25°C, a maximum junction temperature of 150°C, and a thermal resistance junction-to-case of 1.5 °C/W. The storage temperature range is -65 to 150°C. The device is available in a through-hole TO-220-3 package with a lead pitch of 5.1 mm, suitable for standard PCB mounting. Compliance data is available but unverified; please confirm with the manufacturer.
| Qty | Low | High |
|---|---|---|
| 3,000+ | $0.31 | $0.31 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BUT11A has a maximum collector-emitter voltage of 450V (VCEO) and 1000V (VCES with base shorted).
The BUT11A is available in a TO-220-3 through-hole package.
The maximum junction temperature is 150°C, and the storage temperature range is -65 to 150°C.
The BUT11A is listed as RoHS3 compliant, but this is unverified. Confirm with the manufacturer.
The maximum continuous collector current is 5A, with a peak current of 10A.
Typical switching times: turn-on time 1µs, storage time 4µs, fall time 0.8µs.
The DC current gain is 10 minimum, 35 typical at IC=5mA and IC=0.5A (VCE=5V).