| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,222 pcs
|
3222 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
17 pcs
|
17 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BUT100 is a high power NPN silicon transistor manufactured by STMicroelectronics. It is a Multiepitaxial Planar NPN transistor housed in a TO-3 package. The device is designed for use in high frequency and efficiency converters, switching regulators, and motor control applications.
Key electrical specifications include a collector-emitter voltage (VCEO) of 125V, a collector current rating of 50A, and a maximum power dissipation of 300W. The transistor offers fast switching speed and high ruggedness, with a storage time of 2 µs and a fall time of 0.2 µs under inductive load conditions. The maximum operating junction temperature is 200°C.
The BUT100 is mounted using through-hole technology and is supplied in the TO-204AA / TO-3 package. It is intended for applications requiring high current capability and efficient switching performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $7.57 | $7.57 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) is 125V.
The maximum continuous collector current is 50A.
The maximum power dissipation is 300W.
The BUT100 is available in a TO-204AA / TO-3 through-hole package.
The maximum operating junction temperature is 200°C.
The VCE saturation voltage is 0.9V maximum at IC=50A and IB=2.5A.
The thermal resistance junction-to-case is 0.58°C/W maximum.