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BUR51 NPN silicon transistor, 200V VCEO, 60A collector current, 350W power dissipation in TO-3 metal case.
Mfr Part #:

BUR51

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
NPN silicon transistor, 200V VCEO, 60A collector current, 350W power dissipation in TO-3 metal case.
✓ Total Stock: 2,524 pcs
$ Price Range: $11.50

BUR51 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
2,524 pcs
On Request
2524 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

BUR51 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Military Grade
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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BUR51 Description

Short technical summary and product information.

The BUR51 is a silicon Multiepitaxial Planar NPN transistor from STMicroelectronics, designed for switching and linear applications in military and industrial equipment.

 

Key electrical ratings include a collector-emitter voltage (VCEO) of 200V, collector current (IC) of 60A (80A peak), and total power dissipation of 350W at case temperature ≤25°C. DC current gain (hFE) is minimum 20 at 5A/4V and ranges from 15 to 100 at 50A/4V. Saturation voltages are low: VCE(sat) max 1.5V at 50A/5A base drive. Transition frequency is typically 16MHz.

 

The device is housed in a TO-204AA (TO-3) metal case for chassis mounting, with a thermal resistance junction-to-case of 0.5°C/W. Operating junction temperature range is -65°C to 200°C.

BUR51 Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Series: BUR51
Canonical Name: BUR51 NPN Silicon Transistor
Subcategory: High Current NPN Transistor

BUR51 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BUR51 Estimated Pricing

Qty Low High
100+ $11.50 $11.50

Estimated market price range - modelled values for guidance only, not live distributor offers.

BUR51 Features

  • NPN silicon transistor for switching and linear applications.
  • Collector-emitter voltage rating of 200V.
  • Continuous collector current up to 60A.
  • Power dissipation of 350W at 25°C case temperature.
  • TO-3 metal case for chassis mounting.

BUR51 Applications

  • Used in high-current switching power supplies.
  • Suitable for motor control and industrial equipment.
  • Ideal for linear amplifier stages in military gear.
  • Applied in power conversion and inverter circuits.

BUR51 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage (VCEO) of the BUR51?

200V

What is the maximum collector current rating?

60A continuous, 80A peak (10ms)

What is the power dissipation of the BUR51?

350W at case temperature ≤25°C

What package is the BUR51 available in?

TO-204AA (TO-3) metal case for chassis mounting

What is the operating junction temperature range?

-65°C to 200°C

Is the BUR51 RoHS compliant?

RoHS3 compliant (unverified)

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