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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,940 pcs
|
1940 pcs | On Request | 1 | On Request | On Request | 04+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current (IB) | |
| Base Peak Current (Ibm) | |
| Collector Peak Current (ICM) | |
| Collector-Emitter Leakage Current (ICEO) | |
| Collector-Emitter Voltage (VCES) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Breakdown Voltage (BVEBO) | |
| Emitter-Base Voltage (VEBO) | |
| Forward Voltage of Antiparallel Diode (Vf) | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature Range | |
| Supplier Device Package | |
| Tape & Reel | |
| Thermal Resistance - Junction to Case | |
| Thermal Resistance Junction-to-Ambient | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| hfe (Minimum @ Ic=10 mA, Vce=5 V) | |
| ices (Maximum @ VCE=700 V, VBE=-1.5 V) | |
| ices (Maximum @ VCE=700 V, VBE=-1.5 V, Tc=125 °C) | |
| tf (Typical @ Inductive Load, VCC=200 V, IC=2 A, IB 1=0.4 A, VBE(off)=-5 V) | |
| tf (Typical @ Resistive Load, VCC=250 V, IC=2 A, IB 1=0.4 A, IB 2=-0.4 A) | |
| ts (Typical @ Inductive Load, VCC=200 V, IC=2 A, IB 1=0.4 A, VBE(off)=-5 V) | |
| ts (Typical @ Resistive Load, VCC=250 V, IC=2 A, IB 1=0.4 A, IB 2=-0.4 A) | |
| vbesat (Maximum @ IC=0.5 A, IB=0.1 A) | |
| vbesat (Maximum @ IC=1 A, IB=0.2 A) | |
| vbesat (Maximum @ IC=2.5 A, IB=0.5 A) | |
| vcesat (Maximum @ IC=0.5 A, IB=0.1 A) | |
| vcesat (Maximum @ IC=1 A, IB=0.2 A) |
BULK128D-B is a high voltage fast-switching NPN power transistor manufactured by STMicroelectronics. It is designed for use in electronic ballasts for fluorescent lighting and in flyback and forward single-transistor low-power converters. The device features an integrated antiparallel collector-emitter diode and is built with high voltage multi epitaxial planar technology for high switching speeds and medium voltage capability.
Key electrical specifications include a collector-emitter voltage (VCEO) of 400 V minimum, collector-emitter voltage (VCES) of 700 V maximum, emitter-base voltage of 9 V to 18 V, and a collector current rating of 4 A (8 A peak). The transistor can dissipate up to 55 W at a case temperature of 25°C, with a maximum junction temperature of 150°C. DC current gain ranges from 8 to 40 at IC = 2 A, VCE = 5 V, and saturation voltages are specified for base and collector-emitter under various test conditions.
Switching times are provided for resistive and inductive loads, with typical storage times of 2 µs (resistive) and 0.6 µs (inductive), and typical fall times of 0.2 µs and 0.1 µs, respectively. The device is RoHS-compliant and comes in a SOT-82 package with through-hole mounting, also referred to as SOT-82-3.
| Qty | Low | High |
|---|---|---|
| 4,000+ | $0.23 | $0.23 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) is 400 V minimum, the collector-emitter voltage with base-emitter shorted (VCES) is 700 V maximum, and the emitter-base voltage ranges from 9 V to 18 V.
The BULK128D-B is offered in a SOT-82 package (SOT-82-3) with through-hole mounting.
The maximum junction temperature is 150°C, and the storage temperature range is -65°C to 150°C.
The BULK128D-B is listed as RoHS3 compliant, but this status has not been independently verified.
The maximum continuous collector current is 4 A, with a peak collector current of 8 A (tp < 5 ms).
The maximum power dissipation is 55 W at a case temperature of 25°C.
With a resistive load, typical storage time is 2 µs and fall time is 0.2 µs. With an inductive load, typical storage time is 0.6 µs and fall time is 0.1 µs.