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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
12,000 pcs
|
12000 pcs | On Request | 1 | On Request | On Request | 1128 | On Request | On Request | |
|
1,150 pcs
|
1150 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current | |
| Base Emitter Saturation Voltage (@ IC=1 A, IB=0.2 A) | |
| Base Emitter Saturation Voltage (@ IC=2.5 A, IB=0.5 A) | |
| Collector Cutoff Current (Maximum @ VCE=850 V, VBE=0) | |
| Collector Cutoff Current (Maximum @ VCE=850 V, VBE=0, Tj=125 °C) | |
| Collector Emitter Saturation Voltage (Typical/Maximum @ IC=1 A, IB=0.2 A) | |
| Collector-Emitter Sustaining Voltage | |
| Collector-Emitter Voltage (VCES) | |
| Current | |
| DC Current Gain (Minimum @ IC=5 A, VCE=10 V) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Diode Forward Voltage (Internal Diode) | |
| Emitter Cut-off Current | |
| Emitter-Base Voltage (VEBO) | |
| Fall Time (Inductive Load) | |
| Mounting Type | |
| Operating Temperature | |
| Peak Base Current | |
| Peak Collector Current | |
| Power | |
| Storage Temperature | |
| Storage Temperature Range | |
| Storage Time (Inductive Load) | |
| Supplier Device Package | |
| Tape & Reel | |
| Thermal Resistance - Junction to Case | |
| Thermal Resistance Junction-to-Ambient | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| Weight |
The BULB39D-1 is a high voltage fast-switching NPN power transistor manufactured using STMicroelectronics' Multi Epitaxial Planar technology. It is designed for use in electronic transformers for halogen lamps and switch mode power supplies. Key electrical characteristics include a collector-emitter voltage (VCEO) of 450V, collector current of 4A (peak 8A), and a DC current gain (hFE) of 10 minimum at 10mA. The transistor features very high switching speed with typical storage time of 0.7µs and fall time of 50ns. It is housed in a surface-mount D2PAK (TO-263) package and is available in tape and reel packaging (suffix T4). The device has a power dissipation of 70W at case temperature 25°C and a maximum junction temperature of 150°C.
| Qty | Low | High |
|---|---|---|
| 2,000+ | $0.41 | $0.41 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) is 450V, and the collector-emitter voltage with base shorted (VCES) is 850V.
The BULB39D-1 is available in a surface-mount D2PAK (TO-263) package.
The maximum junction temperature is 150°C, and the storage temperature range is -65°C to 150°C.
The BULB39D-1 is listed as RoHS3 Compliant, but this status is unverified.
The maximum collector current is 4A continuous, with a peak current of 8A (tp<5ms).
Typical storage time is 0.7µs (max 1.5µs) and typical fall time is 50ns (max 100ns) under inductive load conditions.
The total power dissipation is 70W at case temperature 25°C.