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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | 652 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Avalanche Energy (Esb) (Typ) | |
| Base Current (IB) (Max) | |
| Base Peak Current (IBM) (Max) | |
| Base-Emitter Saturation Voltage (VBE(sat)) (Max) @ 3.5A, 1A | |
| Collector Cut-off Current (ICEO) (Max) | |
| Collector Cut-off Current (ICES) (Max) | |
| Collector Peak Current (ICM) (Max) | |
| Collector-Emitter Saturation Voltage (VCE(sat)) (Maximum @ IC=1 A, IB=0.2 A) | |
| Collector-Emitter Voltage (VCES) (Max) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| DC Current Gain (hFE) (Minimum/Typical @ Ic=-10 mA, Vce=-5 V) | |
| Emitter-Base Breakdown Voltage (V(BR)EBO) | |
| Fall Time (tf) (Typ) | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Storage Temperature Range | |
| Storage Time (ts) (Typ) | |
| Supplier Device Package | |
| Tape & Reel | |
| Thermal Resistance, Junction-Ambient (Rthj-amb) (Max) | |
| Thermal Resistance, Junction-Case (Rthj-case) (Max) | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BUL742A is a high voltage fast-switching NPN power transistor manufactured by STMicroelectronics using high voltage Multi Epitaxial Planar technology. It is designed for high switching speeds and high voltage capability.
Key electrical specifications include a collector-emitter sustaining voltage (VCEO(sus)) of 400V minimum, a collector-emitter voltage (VCES) of 950V maximum, and a maximum collector current (IC) of 4A (8A peak). The DC current gain (hFE) is a minimum of 16 at 800mA and 3V. The transistor offers low collector-emitter saturation voltage (VCE(sat)) of 0.5V max at 1A and 1.5V max at 3.5A.
The device is housed in a standard TO-220-3 through-hole package, suitable for easy mounting on heatsinks. Thermal characteristics include a junction-to-case thermal resistance of 1.78°C/W and a maximum operating junction temperature of 150°C.
Typical switching times include a storage time of 0.9µs and a fall time of 100ns, making it suitable for fast-switching applications. The transistor also features an avalanche energy rating of 6mJ typical.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.62 | $1.62 |
| 50+ | $0.77 | $0.77 |
| 100+ | $0.69 | $0.69 |
| 500+ | $0.54 | $0.54 |
| 1,000+ | $0.49 | $0.49 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter sustaining voltage (VCEO(sus)) is 400V minimum, and the collector-emitter voltage (VCES) is 950V maximum.
The maximum continuous collector current (IC) is 4A, with a peak current (ICM) of 8A.
The BUL742A is available in a TO-220-3 through-hole package.
The maximum power dissipation is 70W at a case temperature of 25°C.
The maximum operating junction temperature is 150°C, and the storage temperature range is -65°C to 150°C.
The RoHS status is listed as RoHS3 Compliant, but this information is unverified.