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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,434 pcs
|
1434 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BUL58D is an NPN bipolar junction transistor from STMicroelectronics designed for high-voltage switching and amplification applications.
Electrical specifications include a collector-emitter breakdown voltage (Vceo) of 450V, a continuous collector current (Ic) rating of 8A, and a power dissipation (Pd) of 85W. The DC current gain (hFE) is a minimum of 5 at a test condition of Ic=5A, Vce=5V, and the collector-emitter saturation voltage (Vce(sat)) is a maximum of 2V at Ib=1A, Ic=5A. The operating junction temperature (Tj) is rated up to 150°C.
Housed in a TO-220-3 through-hole package, the BUL58D is suitable for power management circuits, motor control, and line-operated systems where a robust, medium-power NPN transistor is required. The through-hole mounting facilitates easy thermal management and manual assembly.
| Qty | Low | High |
|---|---|---|
| 2,000+ | $0.56 | $0.56 |
| 3,000+ | $0.55 | $0.55 |
| 5,000+ | $0.51 | $0.51 |
| 10,000+ | $0.48 | $0.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (Vceo) is 450V.
The continuous collector current (Ic) is 8A.
The power dissipation (Pd) is 85W.
The BUL58D is packaged in a TO-220-3 through-hole case.
The maximum operating junction temperature (Tj) is 150°C.
The minimum hFE is 5 at Ic=5A, Vce=5V.
The maximum Vce(sat) is 2V at Ib=1A, Ic=5A.