BUL58D NPN bipolar transistor rated for 450V collector-emitter breakdown voltage, 8A continuous collector current, and 85W power dissipation in a TO-220-3 through-hole package.
Mfr Part #:

BUL58D

Available from 2 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
NPN bipolar transistor rated for 450V collector-emitter breakdown voltage, 8A continuous collector current, and 85W power dissipation in a TO-220-3 through-hole package.
Total Stock: 3,434 pcs
$ Price Range: $0.48 - $0.56

BUL58D Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,000 pcs
2000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,434 pcs
1434 pcs On Request 1 On Request On Request 14+ On Request On Request

BUL58D Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BUL58D Description

Short technical summary and product information.

The BUL58D is an NPN bipolar junction transistor from STMicroelectronics designed for high-voltage switching and amplification applications.

 

Electrical specifications include a collector-emitter breakdown voltage (Vceo) of 450V, a continuous collector current (Ic) rating of 8A, and a power dissipation (Pd) of 85W. The DC current gain (hFE) is a minimum of 5 at a test condition of Ic=5A, Vce=5V, and the collector-emitter saturation voltage (Vce(sat)) is a maximum of 2V at Ib=1A, Ic=5A. The operating junction temperature (Tj) is rated up to 150°C.

 

Housed in a TO-220-3 through-hole package, the BUL58D is suitable for power management circuits, motor control, and line-operated systems where a robust, medium-power NPN transistor is required. The through-hole mounting facilitates easy thermal management and manual assembly.

BUL58D Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: BUL58D - NPN Bipolar Junction Transistor, 450V Vceo, 8A Ic, TO-220
Subcategory: Single BJT

BUL58D Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BUL58D Estimated Pricing

Qty Low High
2,000+ $0.56 $0.56
3,000+ $0.55 $0.55
5,000+ $0.51 $0.51
10,000+ $0.48 $0.48

Estimated market price range - modelled values for guidance only, not live distributor offers.

BUL58D Features

  • NPN bipolar junction transistor design.
  • Collector-emitter breakdown: 450V.
  • Continuous collector current: 8A.
  • Power dissipation rated at 85W.
  • TO-220-3 through-hole package.

BUL58D Applications

  • Used in power switching circuits.
  • Suitable for motor control systems.
  • Ideal for line-operated power supplies.

BUL58D FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the BUL58D?

The collector-emitter breakdown voltage (Vceo) is 450V.

What is the collector current rating of the BUL58D?

The continuous collector current (Ic) is 8A.

What is the power dissipation of the BUL58D?

The power dissipation (Pd) is 85W.

What is the package type for the BUL58D?

The BUL58D is packaged in a TO-220-3 through-hole case.

What is the operating junction temperature range?

The maximum operating junction temperature (Tj) is 150°C.

What is the DC current gain (hFE) of the BUL58D?

The minimum hFE is 5 at Ic=5A, Vce=5V.

What is the saturation voltage Vce(sat) of the BUL58D?

The maximum Vce(sat) is 2V at Ib=1A, Ic=5A.

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