Mfr Part #:

BUL45D2G

The BUL45D2G is an NPN bipolar power transistor from onsemi, rated for 400V VCEO and 5A continuous collector current. It features an integrated antisaturation network and freewheeling diode, making it suitable for high-speed switching applications.

✓ Total Stock: 14 pcs

$ Price Range: $0.67 - $1.43

BUL45D2G Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Flip Electronics ✓ Non-Authorised Inventory information	14 pcs On Request	14 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

BUL45D2G Description

Short technical summary and product information.

The BUL45D2G is a high-speed, high-gain NPN power transistor from onsemi, designed for applications requiring high dynamic characteristics and tight parameter spreads. It is rated for a collector-emitter sustaining voltage of 400V (min) and a continuous collector current of 5A, with a peak current capability of 10A. The device dissipates up to 75W at a case temperature of 25°C and features low base drive requirements, high peak DC current gain, and extremely low storage time due to the H2BIP structure.

This transistor integrates a collector-emitter freewheeling diode and a built-in efficient 4 antisaturation network, which improve switching performance and reduce external component count. It is fully characterized with guaranteed dynamic VCE(sat) and is suitable for light ballast and power factor correction (PFC) applications.

The BUL45D2G is packaged in a TO-220-3 through-hole package, suitable for easy mounting on heatsinks. It is Pb-Free and RoHS compliant, with an operating junction temperature range of -65°C to 150°C.

BUL45D2G Quick Information

Product Type: Bipolar Transistor (BJT) - Single

Canonical Name: BUL45D2G NPN Bipolar Power Transistor

Subcategory: Single BJT

BUL45D2G Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Yes

BUL45D2G Estimated Pricing

Qty	Low	High
1+	$0.87	$0.87
10+	$1.43	$1.43
100+	$1.14	$1.14
500+	$0.94	$0.94
1,000+	$0.78	$0.78
2,000+	$0.73	$0.73
5,000+	$0.70	$0.70
10,000+	$0.67	$0.67

Estimated market price range - modelled values for guidance only, not live distributor offers.

BUL45D2G Features

NPN power transistor rated 400V and 5A.
Integrated collector-emitter freewheeling diode.
Built-in antisaturation network for fast switching.
RoHS compliant and Pb-free package.
Low base drive requirement reduces driver complexity.

BUL45D2G Applications

Ideal for electronic ballast circuits.
Suitable for power factor correction.
Used in high-speed switching power supplies.
Designed for lighting applications.

BUL45D2G FAQs

6 frequently asked questions generated from this part’s specifications.

What is the collector-emitter voltage rating of the BUL45D2G?

The collector-emitter sustaining voltage (VCEO(sus)) is 400V minimum, 450V typical.

What is the package type of the BUL45D2G?

The BUL45D2G is available in a TO-220-3 through-hole package.

What is the operating temperature range of the BUL45D2G?

The operating junction temperature range is -65°C to 150°C.

Is the BUL45D2G RoHS compliant?

Yes, the BUL45D2G is RoHS3 compliant and Pb-Free.

What is the DC current gain of the BUL45D2G?

The minimum DC current gain (hFE) is 10 at Ic=2A, Vce=1V.

What is the collector-emitter saturation voltage?

The maximum VCE(sat) is 500mV at Ib=400mA, Ic=2A.

Category	Transistors - Bipolar (BJT) - Single
Manufacturer Name	On Semiconductor
Current	5 A
DC Current Gain (hFE) (Min) @ Ic, Vce	10 @ 2A, 1V
Frequency	13 MHz
Mounting Type	Through Hole
Operating Temperature	-65°C ~ 150°C (TJ)
Power	75 W
Storage Temperature	-65°C ~ 150°C
Supplier Device Package	TO-220
Tape & Reel	No
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500mV @ 400mA, 2A
Voltage	400 V