BUL45D2 NPN bipolar power transistor with 400V collector-emitter sustaining voltage, 5A continuous collector current, and 75W power dissipation in a TO-220 package.
Mfr Part #:

BUL45D2

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
NPN bipolar power transistor with 400V collector-emitter sustaining voltage, 5A continuous collector current, and 75W power dissipation in a TO-220 package.
Total Stock: 2,400 pcs

BUL45D2 Available from 1 distributor

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BUL45D2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current - Continuous
Base Current - Peak (Pulse Test: Pulse Width =5ms, Duty Cycle <=10%)
Collector Current - Peak (Pulse Test: Pulse Width =5ms, Duty Cycle <=10%)
Collector-Base Breakdown Voltage (ICBO = 1 mA)
Collector-Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Breakdown Voltage (IEBO = 1 mA)
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BUL45D2 Description

Short technical summary and product information.

The BUL45D2 is a high-speed, high-gain NPN bipolar power transistor from On Semiconductor. It features a collector-emitter sustaining voltage of 400 Vdc (minimum) and a collector-base breakdown voltage of 700 Vdc. The device supports a continuous collector current of 5 A and a peak current of 10 A under pulse conditions. Total device dissipation is rated at 75 W at a case temperature of 25°C.

 

This transistor integrates a collector-emitter free-wheeling diode and an antisaturation network, making it suitable for applications requiring fast switching and low base drive. The DC current gain is characterized at multiple test conditions, with minimum and typical values provided for Ic = 1 A, Vce = 5 V and Ic = 5 A, Vce = 5 V.

 

The BUL45D2 is housed in a TO-220 package and is Pb-free and RoHS compliant. It is designed for use in lighting ballasts and power factor correction circuits.

BUL45D2 Quick Information

Product Type: Bipolar Power Transistor
Series: BUL45D2
Canonical Name: BUL45D2 NPN Bipolar Power Transistor
Subcategory: Single BJT

BUL45D2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1
REACH Status: Compliant

BUL45D2 Features

  • 400V collector-emitter sustaining voltage.
  • 5A continuous collector current rating.
  • 75W power dissipation at 25°C case temperature.
  • Integrated free-wheeling diode and antisaturation network.
  • Pb-free and RoHS compliant.

BUL45D2 Applications

  • Ideal for electronic lighting ballast circuits.
  • Suitable for power factor correction (PFC) applications.
  • Used in high-speed switching power supplies.
  • Designed for low base drive requirement circuits.

BUL45D2 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the collector-emitter sustaining voltage of the BUL45D2?

The collector-emitter sustaining voltage (VCEO) is 400 Vdc minimum, 450 Vdc typical at IC = 100 mA, L = 25 mH.

What is the maximum continuous collector current?

The maximum continuous collector current is 5 A.

What is the total power dissipation of this transistor?

Total device dissipation is 75 W at a case temperature of 25°C.

What package is the BUL45D2 available in?

The BUL45D2 is available in a TO-220 package.

Is the BUL45D2 RoHS compliant?

Yes, the BUL45D2 is Pb-free and RoHS compliant.

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