BUL416T NPN bipolar junction transistor with 800V collector-emitter breakdown voltage and 6A collector current rating. Housed in a TO-220 through-hole package.
Mfr Part #:

BUL416T

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
NPN bipolar junction transistor with 800V collector-emitter breakdown voltage and 6A collector current rating. Housed in a TO-220 through-hole package.
Total Stock: 18 pcs
$ Price Range: $1.60

BUL416T Available from 1 distributor

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BUL416T Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BUL416T Description

Short technical summary and product information.

The BUL416T is an NPN bipolar junction transistor from STMicroelectronics designed for high-voltage switching applications. It features a minimum collector-emitter breakdown voltage of 800V and a maximum continuous collector current of 6A, making it suitable for power conversion and control circuits.

 

With a maximum power dissipation of 110W and a maximum junction temperature of 150°C, this device can handle significant thermal loads in properly designed systems. The DC current gain (hFE) is a minimum of 18 at 700mA collector current and 5V collector-emitter voltage, while the collector-emitter saturation voltage is a maximum of 1.5V at 4A collector current with 1.33A base current.

 

The transistor is offered in a TO-220-3 through-hole package, which is widely used for medium-power semiconductor devices and provides good thermal performance when mounted with a heatsink. The mounting type is through-hole, suitable for traditional PCB assembly processes.

BUL416T Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: STMicroelectronics BUL416T NPN Bipolar Transistor
Subcategory: Single NPN

BUL416T Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BUL416T Estimated Pricing

Qty Low High
1,000+ $1.60 $1.60

Estimated market price range - modelled values for guidance only, not live distributor offers.

BUL416T Features

  • NPN bipolar junction transistor design.
  • 800V minimum collector-emitter breakdown voltage.
  • 6A maximum continuous collector current.
  • 110W maximum power dissipation capability.
  • TO-220 through-hole package for easy mounting.

BUL416T Applications

  • High-voltage power switching circuits.
  • Power conversion and regulation stages.
  • Motor control and drive applications.
  • General purpose high-voltage amplification.

BUL416T FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the BUL416T?

The minimum collector-emitter breakdown voltage (Vceo) is 800V.

What is the maximum collector current rating?

The maximum collector current (Ic) is 6A.

What is the power dissipation of this transistor?

The maximum power dissipation (Pd) is 110W.

What package type does the BUL416T use?

It uses a TO-220-3 through-hole package, with a supplier device package of TO-220.

What is the maximum operating junction temperature?

The maximum operating junction temperature is 150°C.

What is the DC current gain (hFE) of the BUL416T?

The minimum DC current gain (hFE) is 18 at a test condition of Ic=700mA and Vce=5V.

What is the collector-emitter saturation voltage?

The maximum collector-emitter saturation voltage (Vce(sat)) is 1.5V at a test condition of Ib=1.33A and Ic=4A.

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