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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,806 pcs
|
1806 pcs | On Request | 1 | On Request | On Request | 06+ | On Request | On Request | |
|
1,628 pcs
|
1628 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BUL39D is an NPN bipolar junction transistor designed for general-purpose switching and linear amplification applications. It features a collector-emitter voltage rating of 450V, a continuous collector current of 4A, and a power dissipation of 70W. The DC current gain (hFE) is a minimum of 10 at 10mA collector current and 5V Vce, and the collector-emitter saturation voltage is 1.1V maximum at 500mA base current and 2.5A collector current. The transistor is housed in a TO-220-3 through-hole package, suitable for mounting on a heatsink if needed. The maximum junction temperature is 150°C.
| Qty | Low | High |
|---|---|---|
| 3,000+ | $0.28 | $0.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
450V.
4A.
70W.
TO-220-3.
150°C (TJ).
Minimum hFE of 10 at Ic=10mA, Vce=5V.
1.1V maximum at Ib=500mA, Ic=2.5A.