BUL310FP The BUL310FP is a high voltage fast-switching NPN power transistor from STMicroelectronics, rated for 500V collector-emitter voltage and 5A collector current. It comes in a TO-220FP full pack through-hole package.
Mfr Part #:

BUL310FP

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The BUL310FP is a high voltage fast-switching NPN power transistor from STMicroelectronics, rated for 500V collector-emitter voltage and 5A collector current. It comes in a TO-220FP full pack through-hole package.
Total Stock: 6,565 pcs
$ Price Range: $0.73

BUL310FP Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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6,565 pcs
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BUL310FP Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current (IB)
Base Peak Current (Ibm)
Collector Cut-off Current (ICEO)
Collector Peak Current (ICM)
Collector-Emitter Sustaining Voltage (VCEO(sus))
Collector-Emitter Voltage (VCES)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage (VEBO)
ICES (Maximum @ Vce=1000 V, Tj=125 °C)
ICES (Maximum @ Vce=1000 V, Tj=25 °C)
Mounting Type
Operating Temperature
Power
Storage Temperature
Storage Temperature (Tstg)
Supplier Device Package
Thermal Resistance Junction-Ambient (Rthj-amb)
Thermal Resistance Junction-Case (Rthj-case)
Transistor Type
VBE(sat) (Maximum @ Ib=0.2 A, Ic=1 A)
VBE(sat) (Maximum @ Ib=0.4 A, Ic=2 A)
VBE(sat) (Maximum @ Ib=0.6 A, Ic=3 A)
VCE(sat) (Maximum @ Ib=0.2 A, Ic=1 A)
VCE(sat) (Maximum @ Ib=0.4 A, Ic=2 A)
Vce Saturation (Max) @ Ib, Ic
Voltage
hfe (Minimum @ Ic=10 mA, Vce=5 V)
tf (Typical @ Ic=2 A, Ib 1=0.4 A, Vbe(off)=-5 V, Rbb=0, Vcl=250 V, L=200 µH, Tj=125 °C)
tf (Typical/Maximum @ Ic=2 A, Ib 1=0.4 A, Vbe(off)=-5 V, Rbb=0, Vcl=250 V, L=200 µH, Tj=25 °C)
ts (Typical @ Ic=2 A, Ib 1=0.4 A, Vbe(off)=-5 V, Rbb=0, Vcl=250 V, L=200 µH, Tj=125 °C)
ts (Typical/Maximum @ Ic=2 A, Ib 1=0.4 A, Vbe(off)=-5 V, Rbb=0, Vcl=250 V, L=200 µH, Tj=25 °C)

BUL310FP Description

Short technical summary and product information.

The BUL310FP is a high voltage fast-switching NPN power transistor manufactured by STMicroelectronics using high voltage Multi Epitaxial Planar technology. It features a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide reverse bias safe operating area (RBSOA). The device is designed for lighting applications and low cost switch-mode power supplies.

 

Key electrical characteristics include a collector-emitter voltage (VCEO) of 500V, collector-emitter voltage with base-emitter shorted (VCES) of 1000V, and a maximum collector current of 5A (10A peak). The device can dissipate up to 36W at a case temperature of 25°C. DC current gain ranges from 6 to 14 depending on operating conditions, and saturation voltages are specified at multiple test points.

 

The transistor offers very high switching speed with typical storage time of 1.2µs and fall time of 80ns at 25°C. It is fully characterized at 125°C, making it suitable for high temperature operation. The maximum operating junction temperature is 150°C with a junction-to-case thermal resistance of 3.5°C/W.

 

The BUL310FP is housed in a TO-220FP full pack insulated package with 2000V DC insulation (U.L. compliant), providing electrical isolation for the mounting surface. It is a through-hole mount device suitable for horizontal deflection in color TVs, electronic ballasts for fluorescent lighting, and flyback or forward single transistor low power converters.

BUL310FP Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Series: BUL310
Canonical Name: BUL310FP High Voltage Fast-Switching NPN Power Transistor
Subcategory: Single BJT

BUL310FP Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BUL310FP Estimated Pricing

Qty Low High
1,000+ $0.73 $0.73

Estimated market price range - modelled values for guidance only, not live distributor offers.

BUL310FP Features

  • High voltage 500V collector-emitter rating.
  • Fast switching with 80ns fall time.
  • Fully insulated TO-220FP package.
  • Rated for 5A continuous collector current.
  • Characterized for operation at 125°C.

BUL310FP Applications

  • Horizontal deflection in color TVs.
  • Electronic ballasts for fluorescent lighting.
  • Flyback single transistor low power converters.
  • Forward single transistor low power converters.

BUL310FP FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the BUL310FP?

The maximum collector-emitter voltage (VCEO) is 500V with base open, and 1000V (VCES) with base-emitter shorted.

What is the maximum collector current rating?

The maximum continuous collector current is 5A, with a peak current rating of 10A for pulses shorter than 5ms.

What is the power dissipation capability of this transistor?

The maximum power dissipation is 36W at a case temperature of 25°C.

What package is the BUL310FP available in?

The BUL310FP comes in a TO-220-3 Full Pack (TO-220FP) through-hole package with 2000V DC insulation.

What is the operating junction temperature range?

The maximum operating junction temperature is 150°C, and the storage temperature range is -65°C to 150°C.

Is the BUL310FP RoHS compliant?

The part is listed as RoHS3 compliant, though this status is unverified and should be confirmed with the manufacturer.

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