BUL1203E High voltage fast-switching NPN power transistor. Rated for 550V collector-emitter voltage and 5A continuous collector current.
Mfr Part #:

BUL1203E

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
High voltage fast-switching NPN power transistor. Rated for 550V collector-emitter voltage and 5A continuous collector current.
✓ Total Stock: 720 pcs
$ Price Range: $0.66 - $2.50

BUL1203E Available from 1 distributor

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✓ Non-Authorised
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BUL1203E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Power
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BUL1203E Description

Short technical summary and product information.

The BUL1203E is a high voltage fast-switching NPN power transistor manufactured by STMicroelectronics using Diffused Collector technology. It is designed for electronic ballast applications in fluorescent lighting, supporting 277V half bridge and 120V push-pull topologies.

 

Key electrical specifications include a collector-emitter voltage (VCEO) of 550V, collector-base voltage (VCBO) of 1200V, and emitter-base voltage (VEBO) of 9V. The continuous collector current rating is 5A, with a peak current capability of 8A. Power dissipation is 100W at 25°C case temperature. The device offers a DC current gain (hFE) ranging from 10 to 32 under various test conditions, and low collector-emitter saturation voltage (0.5V max at 1A, 0.7V max at 2A, 1.5V max at 3A). Switching speeds are fast with typical turn-on time of 2.5µs, storage time of 0.2µs, and fall time of 0.5µs.

 

The transistor is housed in a TO-220-3 through-hole package with a junction-to-case thermal resistance of 1.25°C/W. The intrinsic ruggedness of the device allows it to withstand high collector current during breakdown conditions without external transil protection. Storage temperature range is -65 to 150°C, and maximum junction temperature is 150°C.

BUL1203E Quick Information

Product Type: Bipolar (BJT) Transistor
Canonical Name: BUL1203E NPN High Voltage Fast-Switching Power Transistor
Subcategory: High Voltage Fast-Switching Transistor

BUL1203E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BUL1203E Estimated Pricing

Qty Low High
1+ $2.50 $2.50
10+ $1.23 $1.23
100+ $1.10 $1.10
500+ $0.88 $0.88
1,000+ $0.81 $0.81
2,000+ $0.74 $0.74
5,000+ $0.68 $0.68
10,000+ $0.66 $0.66

Estimated market price range - modelled values for guidance only, not live distributor offers.

BUL1203E Features

  • High voltage fast-switching NPN transistor.
  • Rated for 550V collector-emitter voltage.
  • 5A continuous collector current capability.
  • TO-220 through-hole package.
  • Low collector-emitter saturation voltage.

BUL1203E Applications

  • Used in electronic ballasts for fluorescent lighting.
  • Ideal for 277V half bridge and 120V push-pull topologies.
  • Suitable for high voltage power converters.

BUL1203E FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating?

The VCEO rating is 550V.

What is the maximum collector current?

Continuous collector current is 5A, with peak current up to 8A.

What package type is the BUL1203E available in?

It is supplied in a TO-220-3 through-hole package.

What is the maximum junction temperature?

The maximum operating junction temperature is 150°C.

Is the BUL1203E RoHS compliant?

It is listed as RoHS3 Compliant, but this is unverified.

What is the DC current gain (hFE) range?

hFE typically ranges from 10 to 32 depending on test conditions (IC and VCE).

What are the typical switching times?

Typical switching times: turn-on 2.5µs, storage 0.2µs, fall 0.5µs.

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