BUL1102EFP NPN bipolar junction transistor with maximum collector-emitter voltage of 450V and collector current of 4A. Housed in a TO-220FP through-hole package with 30W power dissipation.
Mfr Part #:

BUL1102EFP

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
NPN bipolar junction transistor with maximum collector-emitter voltage of 450V and collector current of 4A. Housed in a TO-220FP through-hole package with 30W power dissipation.
Total Stock: 4,750 pcs
$ Price Range: $0.56 - $2.23

BUL1102EFP Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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4,750 pcs
4750 pcs On Request 1 On Request On Request On Request On Request On Request

BUL1102EFP Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BUL1102EFP Description

Short technical summary and product information.

The BUL1102EFP is an NPN bipolar junction transistor manufactured by STMicroelectronics. It is designed for high voltage switching applications, featuring a maximum collector-emitter voltage (VCEO) of 450V and a maximum collector current of 4A. The device offers a power dissipation of 30W, making it suitable for moderate power applications.

 

The transistor has a minimum DC current gain (hFE) of 12 at 2A collector current and 5V VCE, and a maximum collector-emitter saturation voltage of 1.5V at 400mA base current and 2A collector current. The maximum junction temperature is 150°C.

 

The BUL1102EFP is supplied in a TO-220-3 Full Pack (TO-220FP) through-hole package, which provides good thermal performance and ease of mounting on heatsinks. It is RoHS3 compliant and REACH unaffected, with an MSL level of 1 (unlimited). This component is commonly used in power supply circuits, switching regulators, and motor control applications.

BUL1102EFP Quick Information

Product Type: NPN Bipolar Junction Transistor (BJT)
Canonical Name: STMicroelectronics BUL1102EFP NPN Transistor
Subcategory: Single NPN

BUL1102EFP Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BUL1102EFP Estimated Pricing

Qty Low High
1+ $2.23 $2.23
10+ $1.08 $1.08
100+ $0.96 $0.96
500+ $0.77 $0.77
1,000+ $0.65 $0.65
5,000+ $0.59 $0.59
10,000+ $0.56 $0.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

BUL1102EFP Features

  • NPN bipolar junction transistor with 450V VCE.
  • Maximum collector current of 4A.
  • Power dissipation of 30W.
  • TO-220FP through-hole package.
  • Minimum DC current gain of 12 at 2A.

BUL1102EFP Applications

  • Used in power supply switching circuits.
  • Suitable for motor control applications.
  • Ideal for high voltage DC-DC converters.
  • Employed in lamp ballast and inverter designs.

BUL1102EFP FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the BUL1102EFP?

450V.

What package is the BUL1102EFP available in?

TO-220-3 Full Pack (TO-220FP) through-hole package.

What is the maximum operating temperature?

150°C (junction temperature).

Is the BUL1102EFP RoHS compliant?

Yes, RoHS3 compliant (unverified).

What is the maximum collector current?

4A.

What is the power dissipation?

30W.

What is the minimum DC current gain?

12 at Ic=2A, Vce=5V.

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