BUL1102E NPN bipolar transistor (BJT) with 450V collector-emitter breakdown voltage, 4A collector current, and 70W power dissipation. Housed in a through-hole TO-220 package.
Mfr Part #:

BUL1102E

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
NPN bipolar transistor (BJT) with 450V collector-emitter breakdown voltage, 4A collector current, and 70W power dissipation. Housed in a through-hole TO-220 package.
Total Stock: 12,203 pcs
$ Price Range: $0.59 - $2.08

BUL1102E Available from 1 distributor

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BUL1102E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BUL1102E Description

Short technical summary and product information.

The BUL1102E is an NPN bipolar junction transistor (BJT) from STMicroelectronics, designed for medium-power switching and amplification applications. This transistor features a collector-emitter breakdown voltage of 450V and a continuous collector current rating of 4A, making it suitable for a variety of power management circuits.

 

Electrical characteristics include a minimum DC current gain (hFE) of 12 at a collector current of 2A and collector-emitter voltage of 5V, and a maximum collector-emitter saturation voltage of 1.5V at a base current of 400mA and collector current of 2A. The device can dissipate up to 70W of power, with a maximum junction temperature of 150°C, necessitating proper thermal management.

 

Packaged in a TO-220-3 through-hole package, the BUL1102E is easy to mount on printed circuit boards and can be attached to heatsinks for improved thermal performance. The through-hole mounting type simplifies prototyping and manual assembly.

 

Typical applications include power switching, DC-DC converters, motor control, and general purpose amplification where high voltage and moderate current handling are required. The device is commonly used in industrial and consumer electronics power stages.

BUL1102E Quick Information

Product Type: Bipolar (BJT) Transistor
Canonical Name: STMicroelectronics BUL1102E NPN Bipolar Transistor
Subcategory: Single Bipolar Transistor

BUL1102E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BUL1102E Estimated Pricing

Qty Low High
1+ $2.08 $2.08
10+ $1.32 $1.32
100+ $0.90 $0.90
1,000+ $0.74 $0.74
2,000+ $0.62 $0.62
4,000+ $0.61 $0.61
10,000+ $0.59 $0.59

Estimated market price range - modelled values for guidance only, not live distributor offers.

BUL1102E Features

  • NPN bipolar transistor with 450V Vce.
  • 4A collector current and 70W power.
  • TO-220 through-hole package for mounting.
  • Minimum hFE of 12 at 2A, 5V.

BUL1102E Applications

  • Ideal for medium-power switching applications.
  • Used in DC-DC converter circuits.
  • Suitable for motor drive control.
  • Applicable in general purpose amplification.

BUL1102E FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of BUL1102E?

450V

What is the maximum collector current?

4A

What package does the BUL1102E come in?

TO-220-3 (through-hole)

What is the maximum power dissipation?

70W

What is the minimum DC current gain at 2A, 5V?

12

What is the maximum junction temperature?

150°C

Is the BUL1102E RoHS compliant?

RoHS3 Compliant (unverified)

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