| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request | |
|
3,100 pcs
|
3100 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request | |
|
2,005 pcs
|
2005 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BUK9Y21-40E from NXP Semiconductors is a logic level N-channel MOSFET utilizing TrenchMOS technology, packaged in an LFPAK56 (Power SO8) format. This component is designed and qualified to AEC Q101 standards, making it suitable for high-performance automotive applications.
Key electrical characteristics include a drain-source voltage rating of 40 V and a low drain-source on-state resistance (RDSon) of 21 mΩ at typical operating conditions (VGS = 5 V, ID = 10 A, Tj = 25 °C). The MOSFET also offers a true logic level gate with a VGS(th) rating greater than 0.5 V at 175 °C, and is rated for a junction temperature up to 175 °C, making it suitable for thermally demanding environments.
Applications for the BUK9Y21-40E include 12 V automotive systems, motor control, lamp control, solenoid control, transmission control, and ultra-high-performance power switching. Its repetitive avalanche rating further enhances its suitability for robust applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40V.
33A at 25°C case temperature.
Typical 18.1mΩ, maximum 21mΩ at VGS=5V, ID=10A.
-55°C to 175°C.
LFPAK56 (Power-SO8).
45W at 25°C case temperature.
Typical 2.7nC.