| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
110,000 pcs
|
110000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| FET Type | |
| Mounting Type | |
| SVHC Present | |
| Temperature Rating |
The Nexperia USA Inc. BUK9MJT-55PRF,518 is an N-channel enhancement mode field-effect power transistor utilizing TrenchMOS™ technology. It offers very low on-state resistance, with a maximum Rds On of 13.8mOhm at 10A and 10V. The device has a drain-to-source voltage (Vdss) of 55V and is rated for 175°C operation.
This MOSFET is designed for automotive and general-purpose power switching applications, including 12V, 24V, and 42V loads such as motors, lamps, and solenoids. It features logic level gate compatibility, making it suitable for a wide range of control circuits.
The component is packaged in a 20-SOIC (0.295, 7.50mm Width) format, designed for surface mounting. It is supplied on tape and reel. The RoHS status is ROHS3 Compliant, and the Moisture Sensitivity Level (MSL) is 1 (Unlimited).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 55V.
The maximum Rds On is 13.8mOhm at 10A and 10V.
It is a 2 N-Channel (Dual) FET with a Logic Level Gate feature.
The MOSFET is rated for 175°C operation.
It is supplied in a 20-SOIC (0.295, 7.50mm Width) package for surface mounting.