| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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200 pcs
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200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NXP Semiconductors BUK9K52-60E is a dual N-channel MOSFET utilizing TrenchMOS technology, housed in an LFPAK56D package. This AEC Q101 qualified component is designed for high-performance automotive systems, including 12V applications, motor control, lamp control, and solenoid control.
Key electrical characteristics include a drain-source voltage of 60V and a maximum on-state resistance (RDSon) of 55mΩ at a drain current of 5A and junction temperature of 25°C. The device can handle a continuous drain current of up to 16A at 25°C with a gate-source voltage of 5V. It is rated for a maximum continuous power dissipation of 32W at 25°C.
This MOSFET is suitable for thermally demanding environments, featuring a high operating temperature rating of 175°C. It offers a true logic level gate with a VGS(th) rating greater than 0.5V at 175°C. The component is repetitive avalanche rated, making it robust for demanding switching applications.
The BUK9K52-60E is supplied in an LFPAK56D (SOT1205) surface-mount package. It is designed for ultra-high performance power switching and is qualified to the AEC Q101 standard for automotive use.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.71 | $0.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 60 V.
The maximum continuous drain current at 25°C is 16 A.
The maximum on-state resistance is 55 mΩ.
The package type is LFPAK56D (SOT1205).
The operating junction temperature range is -55°C to 175°C.
Yes, this product has been designed and qualified to AEC Q101 standard.