| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
99,000 pcs
|
99000 pcs | On Request | 1 | On Request | On Request | 25+ | On Request | On Request | |
|
115 pcs
|
115 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
| Category | |
| Manufacturer Name |
The BUK9K17-60EX is a dual N-channel MOSFET manufactured by NXP Semiconductors. It offers a drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 26A at 25°C. The MOSFET has a maximum RdsOn of 15.6 mOhm at 10A and 10V, and a gate threshold voltage (Vgs(th)) of 2.1V at 1mA.
This component is suitable for various applications requiring efficient power switching. It features a logic level gate, making it compatible with lower voltage control signals. The device operates within a temperature range of -55°C to 175°C (TJ).
The BUK9K17-60EX comes in a SOT-1205, 8-LFPAK56 package and is designed for surface mounting. Its maximum power dissipation is rated at 53W. The input capacitance (Ciss) is a maximum of 2223pF at 25V, and the gate charge (Qg) is a maximum of 16.5nC at 5V.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.58 | $1.58 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 60V.
The junction temperature range is -55°C to 175°C.
The package is SOT-1205, 8-LFPAK56.
The maximum gate charge (Qg) is 16.5 nC at 5V.
The maximum input capacitance (Ciss) is 2223 pF at 25V.
The maximum on-resistance (Rds(on)) is 15.6 mOhm at 10A and 10V.
The maximum gate threshold voltage (Vgs(th)) is 2.1V at 1mA.