| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,500 pcs
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4500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The BUK9E6R1 is an N-Channel MOSFET manufactured by NXP Semiconductors. This component is designed for power switching applications, offering a breakdown voltage of 100V and a continuous drain current capability of 120A.
It is housed in an I2PAK package, suitable for surface mounting. The MOSFET's electrical characteristics make it a reliable choice for various electronic circuits requiring efficient power control.
Key electrical specifications include a 100V breakdown voltage and a 120A continuous drain current. These parameters are critical for applications demanding high power handling capabilities. The I2PAK package facilitates integration into power electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage is 100V.
The continuous drain current is 120A.
The BUK9E6R1 is in an I2PAK package.
The RoHS status is RoHS3 Compliant.
The MSL is 1 Unlimited.
The REACH status is REACH Unaffected.