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6,295 pcs
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6295 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BUK9E06-55B from Infineon is an N-channel enhancement mode Field-Effect Transistor (FET) utilizing TrenchMOS technology, packaged in a plastic SOT226 (I2PAK) for surface mounting. This device is designed and qualified for automotive critical applications, making it suitable for 12 V and 24 V loads, general purpose power switching, and driving motors, lamps, and solenoids.
Key electrical characteristics include a maximum drain-source voltage (VDS) of 55 V and a continuous drain current (ID) of up to 75 A at 25°C ambient temperature with a VGS of 5V. The on-state resistance (RDSon) is as low as 4.85 mOhm at VGS = 10V and 25A, and 5.16 mOhm at VGS = 5V and 25A, contributing to low conduction losses. The FET is rated for a maximum junction temperature of 175°C, making it suitable for thermally demanding environments.
This product is Q101 compliant and suitable for logic level gate drive sources. Its avalanche ruggedness is demonstrated by a non-repetitive drain-source avalanche energy (EDS(AL)S) of 679 mJ under specified conditions.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) is 55V.
The BUK9E06-55B is available in an SOT226 (I2PAK) surface-mount package.
The maximum drain-source on-state resistance is 4.85mΩ at VGS=10V, ID=25A, Tj=25°C.
The peak drain current is 587A under pulsed conditions (tp≤10µs).
The maximum total power dissipation is 258W at Tmb=25°C.
The non-repetitive drain-source avalanche energy is 679mJ at ID=75A and Vsup=55V.
The maximum gate-source voltage is 15V.
