| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,985 pcs
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1985 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NXP Semiconductors BUK9E06-55B is an N-channel enhancement mode Field-Effect Transistor (FET) utilizing TrenchMOS technology. It is designed and qualified for automotive critical applications, making it suitable for 12V and 24V loads, general purpose power switching, and driving motors, lamps, and solenoids.
Key electrical specifications include a maximum drain-source voltage of 55V and a continuous drain current of up to 75A at 25°C ambient temperature. The on-state resistance (RDSon) is as low as 4.85 mOhm at a gate-source voltage of 10V and 25A drain current, contributing to low conduction losses. The device is Q101 compliant and rated for operation in thermally demanding environments up to 175°C.
This MOSFET is housed in an I2PAK plastic package. Its design allows for logic level gate drive sources. The product is suitable for automotive systems and general purpose power switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 55V.
The continuous drain current is rated at 75A.
The on-state resistance is 4.85 mOhm at VGS=10V and 25A, and 5.16 mOhm at VGS=5V and 25A.
The maximum operating temperature is 175°C.
The BUK9E06-55B is supplied in an I2PAK package.
Yes, the BUK9E06-55B is RoHS3 Compliant.
The Moisture Sensitivity Level is 1.