BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,400 pcs
|
2400 pcs | On Request | 1 | On Request | On Request | 1250 | On Request | On Request | |
|
3 pcs
|
3 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| SVHC Present |
The NXP Semiconductors BUK964R1-40E is a logic level N-channel MOSFET utilizing TrenchMOS technology, designed for high-performance automotive applications and qualified to AEC Q101 standards.
This MOSFET features a drain-source voltage rating of 40V and a continuous drain current of 75A at 25°C. Its total power dissipation is rated at 182W at 25°C. The device exhibits a low drain-source on-state resistance of typically 3.4 mOhm at 25A and 5V VGS.
Suitable for thermally demanding environments, it has a maximum junction temperature of 175°C. The true logic level gate has a Vgs(th) rating greater than 0.5V at 175°C. It is packaged in a D2PAK (SOT404) surface-mount package.
Applications include 12V automotive systems, motors, lamps, solenoid control, start-stop micro-hybrid applications, transmission control, and ultra-high performance power switching.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.03 | $3.03 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage is 40V.
The continuous drain current is 75A.
The total power dissipation is 182W.
The typical drain-source on-state resistance is 3.4 mOhm.
The package type is D2PAK (SOT404).
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.