| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,820 pcs
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1820 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Industrial Grade | |
| Junction Temperature | |
| Lead Spacing | |
| Lead Style | |
| Mounting Type | |
| SVHC Present | |
| Storage Temperature |
The NXP Semiconductors BUK962R5-60E118 is a logic level N-channel MOSFET utilizing TrenchMOS technology, packaged in a SOT404 (D2PAK) surface-mount case. This device is qualified to the AEC Q101 standard, making it suitable for high-performance automotive applications.
Key electrical specifications include a drain-source voltage (VDS) of 60V and a continuous drain current (ID) of 120A at 25°C ambient temperature. The on-state resistance (RDSon) is a low 2 mOhm typical at 25A and 25°C junction temperature with a 5V gate-source voltage. The device can handle a maximum continuous power dissipation (Ptot) of 349W at 25°C.
Designed for thermally demanding environments, this MOSFET features a high junction temperature rating of 175°C. It also boasts a true logic level gate with a VGS(th) rating greater than 0.5V at 175°C. Applications include 12V automotive systems, motors, lamps, solenoid control, start-stop micro-hybrid systems, and transmission control.
The BUK962R5-60E118 is supplied in a D2PAK package with surface mount termination. Its robust design and automotive qualification make it a reliable choice for power switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.75 | $0.75 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) is 60V.
It is available in a D2PAK (SOT404) surface mount package.
The junction temperature range is -55°C to 175°C.
The continuous drain current (ID) is 120A at 25°C case temperature with VGS=5V.
The typical drain-source on-state resistance is 2mOhm at VGS=5V, ID=25A, Tj=25°C.
The typical gate-drain charge (QGD) is 41.2nC.
The peak drain current (IDM) is 1008A for pulsed operation at 25°C.